Abstract:
Methods and a system for scanning scattering contrast inspection for the identification of defects in an actual pattern block on a sample as compared to a desired pattern block. Most of the information in the reciprocal space (spatial frequency domain) is omitted in order to increase the throughput. That information in the reciprocal space is captured which gives the highest defect information, namely contrast signal between the defective and defect-free structure. Deviations from the expected diffraction pattern allow rapid identification of defects on the actual pattern. The first method learns the correct reconstructed diffraction image by comparing the repetitive pattern blocks. The second method focuses on the appearance of predictable defects in the spatial frequency domain of the reconstructed diffraction image thereby defining regions of interest where the defects materialize. Only the regions of interest are considered and compared to the reconstruction diffraction image of a defect-free pattern block.
Abstract:
A compact light source based on electron beam accelerator technology includes a storage ring, a booster ring, a linear accelerator and an undulator for providing light having the characteristics for actinic mask inspection at 13.5 nm. The booster ring and the storage ring are located at different levels in a concentric top view arrangement in order to keep the required floor space small and to reduce interference effects. Quasi-continuous injection by enhanced top-up injection leads to high intensity stability and combats lifetime reductions due to elastic beam gas scattering and Touschek scattering. Injection into the storage ring and extraction from the booster ring are performed diagonal in the plane which is defined by the parallel straight section orbits of the booster ring and the storage ring. For the top-up injection from the booster ring into the storage ring two antisymmetrically arranged Lambertson septa are used.
Abstract:
Reflective and scanning CDI for identifying errors in mask patterns and defects on mask blanks. Providing a set-up for scanning the mask in reflection mode with low and/or high NA. Illuminating the mask pattern with EUV light at 2 to 35°. Detecting the diffracted light beam with a position sensitive detector. Analyzing the detected intensities using ptychographic algorithms and thereby obtaining a high resolution image of the sample of arbitrary patterns. Analyzing the detected intensities for intensity variations deviating from the normal intensity distribution caused by the periodic mask pattern in order to detect defects on the mask. This novel technique may be referred to as differential CDI. For periodically structured masks, a fast inspection can be executed by steps of multiples of period, which should give the same diffraction pattern. The investigation for only the deviation from the normal diffraction pattern allows rapid identification of periodic mask pattern defects.