公开(公告)号：US20060060980A1

公开(公告)日：2006-03-23

申请号：US10711503

申请日：2004-09-22

申请人： PEI-HAW TSAO ,  Chuen-Jye LIN ,  Szu-Wei LU ,  Ching Chun LU ,  Chender HUANG ,  Mirng-Ji LII

发明人： PEI-HAW TSAO ,  Chuen-Jye LIN ,  Szu-Wei LU ,  Ching Chun LU ,  Chender HUANG ,  Mirng-Ji LII

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/563 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/0401

摘要： Disclosed is a method of manufacturing a semiconductor package device. In one embodiment, the method includes providing a package substrate having a first coefficient of thermal expansion and at least one bonding pad on the substrate. The method also includes forming an integrated circuit chip having electrical devices, having at least one coupling structure for electrically coupling the chip to the at least one bonding pad, and having a second coefficient of thermal expansion different than the first coefficient of thermal expansion. The method further includes removing a portion of a thickness of the chip that is free of the electrical devices sufficient to allow the chip to distort substantially with the substrate during temperature changes despite the mismatch in their respective coefficients of thermal expansion. The method also includes bonding the chip to the substrate using the at least one coupling structure and the at least one bonding pad.

摘要翻译： 公开了半导体封装器件的制造方法。 在一个实施例中，该方法包括提供具有第一热膨胀系数的封装衬底和在衬底上的至少一个焊盘。 该方法还包括形成具有电子器件的集成电路芯片，具有至少一个耦合结构，用于将芯片电耦合到至少一个焊盘，并具有与第一热膨胀系数不同的第二热膨胀系数。 该方法还包括去除芯片的厚度的一部分，该厚度不含电气装置，足以允许芯片在温度变化的同时基本上与基板发生扭曲，尽管它们各自的热膨胀系数不匹配。 该方法还包括使用至少一个耦合结构和至少一个接合焊盘将芯片接合到衬底。