公开(公告)号：US20190198279A1

公开(公告)日：2019-06-27

申请号：US16329688

申请日：2017-07-24

Applicant: PEKING UNIVERSITY

Inventor： Xianlong WEI ,  Gongtao WU

IPC: H01J3/02 ,  H01J29/02 ,  H01J9/18 ,  H01J35/06

Abstract: A tunneling electro source, an array thereof and methods for making the same are provided. The tunneling electron source is a surface tunneling micro electron source having a planar multi-region structure. The tunneling electron source includes an insulating substrate, and two conductive regions and one insulating region arranged on a surface of the insulating substrate. The insulating region is arranged between the two conductive regions and abuts on the two conductive regions. Minimum spacing between the two conductive regions, which equals to a minimum width of the insulating region, is less than 100 nm.