公开(公告)号：US20170335454A1

公开(公告)日：2017-11-23

申请号：US15586488

申请日：2017-05-04

Applicant: PHILTECH Inc.

Inventor： Yuji FURUMURA ,  Noriyoshi SHIMIZU ,  Shinji NISHIHARA ,  Eri HAIKATA ,  Masato ISHIKAWA

IPC: C23C16/455 ,  C23C16/30 ,  H01L51/52 ,  G02F1/1333 ,  H01L31/0216

CPC classification number: C23C16/45527 ,  C23C16/30 ,  C23C16/403 ,  C23C16/45523 ,  C23C16/45557 ,  G02F1/133345 ,  G02F2201/501 ,  H01L31/02167 ,  H01L51/5253 ,  Y02E10/50

Abstract: A film-forming method for forming a film in a film-forming apparatus includes generating first gas molecular species and second gas molecular species by causing the first source gas and the second source gas accumulated in the accumulation mechanisms to pass through respective instantaneously-heating units, sharply raising partial pressure of the first gas molecular species and partial pressure of the second gas molecular species by projectingly supplying the first gas molecular species and the second gas molecular species to the reaction chamber in which the substrate has been placed, which has been depressurized, and which has a constant capacity; bringing the first gas molecular species or the second gas molecular species into reaction by alternately repeatedly guiding the first gas molecular species or the second gas molecular species to a surface of the substrate, and forming a compound film on the surface of the substrate.