公开(公告)号：US20240304259A1

公开(公告)日：2024-09-12

申请号：US18298335

申请日：2023-04-10

申请人： PHISON ELECTRONICS CORP.

发明人： Po-Cheng Su ,  Po-Hao Chen ,  Yu-Cheng Hsu ,  Wei Lin

IPC分类号： G11C16/26 ,  G11C16/08 ,  G11C16/34

CPC分类号： G11C16/26 ,  G11C16/08 ,  G11C16/3404

摘要： A voltage prediction method, a memory storage device and a memory control circuit unit are disclosed. The method includes: reading a plurality of memory cells in a rewritable non-volatile memory module by using a first read voltage level to obtain count information, and the first read voltage level is configured to distinguish a first state and a second state adjacent to each other in a threshold voltage distribution of the memory cells, and the count information reflects a total number of first memory cells meeting a target condition among the memory cells; and predicting a second read voltage level according to the count information, and the second read voltage level is configured to distinguish a third state and a fourth state adjacent to each other in the threshold voltage distribution.

公开(公告)号：US20240304235A1

公开(公告)日：2024-09-12

申请号：US18301275

申请日：2023-04-17

申请人： PHISON ELECTRONICS CORP.

发明人： Po-Hao Chen ,  Po-Cheng Su ,  Shih-Jia Zeng ,  Yu-Cheng Hsu ,  Wei Lin

IPC分类号： G06F3/06 ,  G11C16/10 ,  G11C16/26

CPC分类号： G11C11/409 ,  G06F3/0679 ,  G11C16/26

摘要： A voltage calibration method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: reading first data from a first physical unit using a first read voltage level and reading second data from at least one second physical unit using a second read voltage level; obtaining count information reflecting a total number of memory cells meeting a default condition in the first physical unit and the at least one second physical unit according to the first data and the second data; and calibrating the first read voltage level according to the count information.