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    SURFACE ACOUSTIC WAVE DEVICE
    1.
    发明申请
    SURFACE ACOUSTIC WAVE DEVICE 有权

    公开(公告)号：US20230071292A1

    公开(公告)日：2023-03-09

    申请号：US17903757

    申请日：2022-09-06

    Applicant: PIEZO STUDIO INC. ,  UNIVERSITY OF YAMANASHI

    Inventor： Shoji KAKIO ,  Noritoshi KIMURA

    IPC: H03H9/02 ,  H03H9/145

    Abstract: A surface acoustic wave device includes a piezoelectric substrate formed from a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal, and an interdigital electrode formed on the surface of the piezoelectric substrate and formed from Al. The interdigital electrode is configured to generate a Love-wave-type SH wave on the surface of the piezoelectric substrate. A normalized film thickness obtained by dividing the film thickness of the interdigital electrode by the wavelength of the Love-wave-type SH wave is 0.16 or less.

    Method for manufacturing piezoelectric thin-film element
    3.
    发明授权
    Method for manufacturing piezoelectric thin-film element 有权

    公开(公告)号：US10771032B2

    公开(公告)日：2020-09-08

    申请号：US15750821

    申请日：2016-07-25

    Applicant: PIEZO STUDIO INC. ,  TOHOKU UNIVERSITY

    Inventor： Kenji Inoue ,  Akira Yoshikawa ,  Yuji Ohashi ,  Yuui Yokota ,  Kei Kamada ,  Shunsuke Kurosawa

    IPC: H03H3/04 ,  H03H3/02 ,  H01L41/337 ,  H03H9/13 ,  H03H9/17 ,  H01L41/29 ,  H03H9/05 ,  H03H9/56

    Abstract: To improve the Q value of a piezoelectric thin-film element in a state in which unnecessary vibration is suppressed, an acoustic reflection film (104) is affixed to a first electrode (102), a piezoelectric single-crystal substrate (101) is thinned by polishing from the other surface (101b) of the piezoelectric single-crystal substrate (101), such that the first electrode (102) and piezoelectric thin film (105) are piled on the piezoelectric single-crystal substrate (101). In this polishing, a pressure (polishing pressure) to the surface (101b) during polishing in an electrode formation region where the first electrode (102) is formed differs from that in a non-electrode formation region around the electrode formation region. Consequently, the electrode formation region of the piezoelectric thin film (105), where the first electrode (102) is formed, is made thinner than the non-electrode formation region around the electrode formation region.

    OSCILLATION CIRCUIT AND ELECTRONIC DEVICE
    6.
    发明公开
    OSCILLATION CIRCUIT AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20230291355A1

    公开(公告)日：2023-09-14

    申请号：US18006122

    申请日：2021-05-07

    Applicant: PIEZO STUDIO INC. ,  INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION

    Inventor： Masaya NOHARA ,  Noritoshi KIMURA

    IPC: H03B5/36

    CPC classification number: H03B5/364 ,  H03B2200/0082 ,  H03B2200/0012

    Abstract: An oscillation circuit includes an oscillator (X1), capacitors (C1, C2) connected between two terminals of the oscillator (X1), and an amplification circuit (A1) having an input terminal connected to a connecting point between the oscillator (X1) and the capacitor (C1) and an output terminal connected to a connecting point between the capacitor (C1) and the capacitor (C2). The amplification circuit (A1) includes an n-type transistor (M1) and a p-type transistor (M2) respectively having source terminals, the connecting point of which is connected to the output terminal of the amplification circuit (A1), a p-type transistor (M3) configured to connect a gate terminal of the n-type transistor (M1) to a power supply terminal at the time of an oscillation stop and disconnect the power supply terminal and the gate terminal of the n-type transistor (M1) at the time of an oscillation operation, and an n-type transistor (M4) configured to connect a gate terminal of the p-type transistor (M2) to ground at the time of the oscillation stop and disconnect a ground terminal and the gate terminal of the p-type transistor (M2) at the time of the oscillation operation. It is possible to implement low power consumption and high-speed oscillation activation of the oscillation circuit.

    METHOD FOR MANUFACTURING PIEZOELECTRIC THIN-FILM ELEMENT
    7.
    发明申请
    METHOD FOR MANUFACTURING PIEZOELECTRIC THIN-FILM ELEMENT 审中-公开

    公开(公告)号：US20180226939A1

    公开(公告)日：2018-08-09

    申请号：US15750821

    申请日：2016-07-25

    Applicant: PIEZO STUDIO INC. ,  TOHOKU UNIVERSITY

    Inventor： Kenji INOUE ,  Akira YOSHIKAWA ,  Yuji OHASHI ,  Yuui YOKOTA ,  Kei KAMADA ,  Shunsuke KUROSAWA

    IPC: H03H3/04 ,  H03H9/13 ,  H03H9/17

    Abstract: To improve the Q value of a piezoelectric thin-film element in a state in which unnecessary vibration is suppressed, an acoustic reflection film (104) is affixed to a first electrode (102), a piezoelectric single-crystal substrate (101) is thinned by polishing from the other surface (101b) of the piezoelectric single-crystal substrate (101), such that the first electrode (102) and piezoelectric thin film (105) are piled on the piezoelectric single-crystal substrate (101). In this polishing, a pressure (polishing pressure) to the surface (101b) during polishing in an electrode formation region where the first electrode (102) is formed differs from that in a non-electrode formation region around the electrode formation region. Consequently, the electrode formation region of the piezoelectric thin film (105), where the first electrode (102) is formed, is made thinner than the non-electrode formation region around the electrode formation region.

    OSCILLATION CIRCUIT AND ELECTRONIC DEVICE
    8.
    发明申请
    OSCILLATION CIRCUIT AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20250158570A1

    公开(公告)日：2025-05-15

    申请号：US18943436

    申请日：2024-11-11

    Applicant: Inter-University Research Institute Corporation High Energy Accelerator Research Organization ,  Piezo Studio Inc.

    Inventor： Masaya NOHARA ,  Takehito ISHI ,  Noritoshi KIMURA

    IPC: H03B5/06 ,  H03B5/36

    Abstract: The oscillation circuit 1 comprises: an oscillator X1; a first capacitance CF having one end connected to the oscillator X1; a second capacitance CO having one end connected to the other end of the first capacitance CF; an output terminal Vo connected to a connection point N2 of the first capacitance CF and the second capacitance CO; an amplifier circuit A1 connected between a node between the oscillator X1 and the first capacitance CF and a connection point N2 of the first capacitance CF and the second capacitance CO to form an oscillation loop together with the first capacitance CF; a differential amplifier circuit A2 arranged on the oscillation loop; and a feedback path 3 configured to feed a part of an output on the output terminal Vo to the differential amplifier circuit A2.

    Surface acoustic wave device
    9.
    发明授权
    Surface acoustic wave device 有权

    公开(公告)号：US12255610B2

    公开(公告)日：2025-03-18

    申请号：US17903757

    申请日：2022-09-06

    Applicant: PIEZO STUDIO INC. ,  UNIVERSITY OF YAMANASHI

    Inventor： Shoji Kakio ,  Noritoshi Kimura

    IPC: H03H9/02 ,  H03H9/145

    Abstract: A surface acoustic wave device includes a piezoelectric substrate formed from a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal, and an interdigital electrode formed on the surface of the piezoelectric substrate and formed from Al. The interdigital electrode is configured to generate a Love-wave-type SH wave on the surface of the piezoelectric substrate. A normalized film thickness obtained by dividing the film thickness of the interdigital electrode by the wavelength of the Love-wave-type SH wave is 0.16 or less.

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