PHOTODIODE AND MANUFACTURING METHOD THEREOF
    2.
    发明公开

    公开(公告)号:US20230369378A1

    公开(公告)日:2023-11-16

    申请号:US18129108

    申请日:2023-03-31

    CPC classification number: H01L27/14652 H01L27/1461 H01L27/14689

    Abstract: A photodiode comprises a substrate, a first collection layer, a first type well layer, a second type well layer and a second collection layer. The substrate has a first surface and a second surface. The substrate defines a bias region and a signal region. The first collection layer, the first type well layer, the first type well layer, the second type well layer, and the second collection layer are formed in the substrate. The first type well layer is disposed between the first surface and the first collection layer. The second type well layer is disposed between the first type well layer and the first collection layer. The second collection layer is located between the first surface and the second well layer.

    OPTICAL SENSOR AND PHOTODIODE
    3.
    发明公开

    公开(公告)号:US20230366991A1

    公开(公告)日:2023-11-16

    申请号:US17740371

    申请日:2022-05-10

    Inventor: Yu-Wei Wang

    CPC classification number: G01S7/4863 H01L31/107 G01S17/10 H01L27/14643

    Abstract: A photodiode, comprising: a first photodiode, comprising a p type substrate and a signal output region; a positive electric field providing structure, provided in the P type substrate, configured to receive a positive voltage to provide a positive electric field according to the positive voltage to attract electrons in the P type substrate; wherein an avalanche region is formed when the positive voltage is larger than a threshold voltage, thereby a current path is formed between the signal output region and the positive electric field providing structure. The present invention also discloses an optical sensor comprising pixels with different light sensitivities.

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