公开(公告)号：US20240183036A1

公开(公告)日：2024-06-06

申请号：US18511096

申请日：2023-11-16

申请人： PJP TECH INC.

发明人： Bum Ho CHOI ,  Kyung Shin PARK ,  Hyun Ho KWON ,  Dong Hyoun KIM ,  Suk Ho LIM ,  Jong Wook JEONG ,  Seung Soo LEE

IPC分类号： C23C16/455 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14

CPC分类号： C23C16/45574 ,  C23C16/4583 ,  C30B25/12 ,  C30B25/14

摘要： Provided are an epitaxial growth apparatus and a multi-layer gas supply module used therefor, the epitaxial growth apparatus including: a reaction chamber; a susceptor positioned in the reaction chamber and configured to seat a wafer thereon; and a multi-layer gas supply module configured to supply a gas to the reaction chamber to form an epitaxial layer on the wafer, wherein the multi-layer gas supply module includes an injector including ports of a plurality of layers, each of which discharges a different gas for each layer, among the ports of the plurality of layers, the ports of each layer including a center port corresponding to a central region of the wafer, and a pair of edge ports corresponding to both edge regions of the wafer, and a flow distribution unit configured to distribute gas flows input to the center port and the edge port among the ports of each layer independently from each other.