公开(公告)号：US11713518B2

公开(公告)日：2023-08-01

申请号：US17569098

申请日：2022-01-05

Applicant: POSTECH Research and Business Development Foundation

Inventor： Unyong Jeong ,  Giri Anupam ,  Geonwoo Kim ,  Ghorai Arup

IPC: C30B7/14 ,  C30B29/46 ,  C30B30/04 ,  H01L21/02

CPC classification number: C30B29/46 ,  C30B7/14 ,  C30B30/04 ,  H01L21/02293 ,  H01L21/02422

Abstract: Provided is a method for forming a chalcogenide thin film, the method including forming a chalcogen element-containing film on a carrier substrate, disposing the chalcogen element-containing film on a silicon wafer, wherein the surface of the silicon wafer and the surface of the chalcogen element-containing film are in contact with each other, performing heat treatment on the silicon wafer and the chalcogen element-containing film at least one time, and removing the carrier substrate. The silicon wafer has a crystal plane of (111).