公开(公告)号：US11862434B2

公开(公告)日：2024-01-02

申请号：US17117720

申请日：2020-12-10

Applicant: PSK INC.

Inventor： Young Jae Ma ,  Sung Jin Yoon ,  Hyo Jeong Seo ,  Jong Woo Park

IPC: H01J37/32 ,  C23C4/04

CPC classification number: H01J37/32477 ,  H01J37/321 ,  H01J37/3222 ,  C23C4/04

Abstract: Embodiments of the inventive concept provide a substrate processing apparatus. The substrate treating apparatus comprises a process treating unit providing a treating space performed treating the substrate; a plasma generating unit generating the plasma discharging a process gas, and supplying the plasma to the treating space. The plasma generating unit provides a plasma chamber having a generating space of the plasma; an antenna wound to surround the plasma chamber outside the plasma chamber; a first coating film covering inside walls of the plasma chamber and comprising yttrium fluoride (YF3).

公开(公告)号：US20230207262A1

公开(公告)日：2023-06-29

申请号：US17710269

申请日：2022-03-31

Applicant: PSK INC.

Inventor： Jong Woo Park ,  Sung Jin Yoon ,  A Ram Kim ,  Soo Yeong Yang ,  Ji Seung Kim ,  Yu Jin Jang

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32651 ,  H01J37/32522 ,  H01J2237/327

Abstract: A substrate treating apparatus includes a process treating unit providing a treating space for treating a substrate and a plasma generation unit provided above the process treating unit and generating a plasma from a process gas. The plasma generation unit includes a plasma chamber having a discharge space formed therein, an antenna surrounding an outside of the plasma chamber and flowing a high frequency current therethrough, and a cover member surrounding an outside of the antenna, and wherein the cover member is grounded.