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公开(公告)号：US20240297018A1
公开(公告)日：2024-09-05
申请号：US18589744
申请日：2024-02-28
发明人： Taro IKEDA , Yuki OSADA , Hiroyuki MIYASHITA
IPC分类号： H01J37/32
CPC分类号： H01J37/32183 , H01J37/3211 , H01J2237/327
摘要： A distributor for distributing electromagnetic waves to a plurality of output terminals, the distributor includes: a power supply terminal configured to be electrically connected to a radio-frequency power source configured to be capable of varying frequency; and a plurality of filters provided respectively at the plurality of output terminals to which the electromagnetic waves input to the power supply terminal are distributed. The plurality of filters is configured to have different frequency characteristics.
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公开(公告)号：US12080517B2
公开(公告)日：2024-09-03
申请号：US17686716
申请日：2022-03-04
IPC分类号： H01J37/32
CPC分类号： H01J37/32183 , H01J2237/327
摘要： An ignition method in a plasma processing apparatus includes: applying a first radio frequency from a radio-frequency power supply to an electrode of a plasma generator, thereby igniting plasma from a gas, the radio-frequency power supply being capable of applying a radio frequency of a variably controlled frequency to the electrode of the plasma generator; and applying a second radio frequency different from the first radio frequency to the electrode of the plasma generator after a predetermined time is elapsed after applying the first radio frequency to the electrode of the plasma generator.
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3.发明公开公开(公告)号：US20240274404A1
公开(公告)日：2024-08-15
申请号：US18107819
申请日：2023-02-09
IPC分类号： H01J37/304 , C23C14/22 , C23C14/54 , H01J37/09 , H01J37/317
CPC分类号： H01J37/304 , C23C14/221 , C23C14/54 , H01J37/09 , H01J37/3171 , H01J2237/006 , H01J2237/0453 , H01J2237/24564 , H01J2237/327
摘要： An ion implanter and a method for reducing particle formation in a process chamber are disclosed. The ion implanter includes one or more gas sources in communication with the process chamber to introduce an oxygen-containing gas. After certain criteria has been met, a gas treatment process is initiated. This criteria may be related to the number of workpieces that have been processed or based on the number of particles detected in the process chamber. During the gas treatment process, the oxygen-containing gas is introduced and interacts with depositions disposed on the walls of the process chamber to transform the brittle film into a softer more pliable film that may be less susceptible to breaking. In some embodiments, the oxygen-containing gas may be oxygen gas, ozone or oxygen radicals which are introduced to the process chambers. In some embodiments, water vapor is introduced.
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4.发明公开公开(公告)号：US20240249923A1
公开(公告)日：2024-07-25
申请号：US18624655
申请日：2024-04-02
发明人： Akihiro SATO , Tsuyoshi Takeda , Yukitomo Hirochi
IPC分类号： H01J37/32 , C23C16/458 , C23C16/50 , C23C16/509 , C23C16/52 , H01L21/02 , H05H1/46
CPC分类号： H01J37/32568 , C23C16/4587 , C23C16/50 , C23C16/509 , C23C16/52 , H01J37/3244 , H01J37/32834 , H01L21/0217 , H01L21/02274 , H05H1/46 , H01J2237/327 , H01J2237/3323 , H01L21/02211 , H01L21/0228
摘要： There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.
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公开(公告)号：US20240222115A1
公开(公告)日：2024-07-04
申请号：US18396857
申请日：2023-12-27
申请人： ASM IP Holding B.V.
发明人： Antti Niskanen
IPC分类号： H01L21/02 , C23C16/34 , C23C16/455 , H01J37/32
CPC分类号： H01L21/0262 , C23C16/342 , C23C16/347 , C23C16/45542 , C23C16/45544 , C23C16/45553 , H01J37/32082 , H01J37/32449 , H01L21/02521 , H01J2237/327 , H01J2237/3321
摘要： Methods for forming a layer comprising boron carbon nitride on a substrate by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a boron precursor pulse that comprises exposing the substrate to a boron precursor and a silicon-containing precursor pulse that comprises exposing the substrate to a silicon-containing precursor. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.
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公开(公告)号：US20240222077A1
公开(公告)日：2024-07-04
申请号：US18396280
申请日：2023-12-26
申请人： DAIHEN Corporation
发明人： Yuichi HASEGAWA , Yuya UENO
IPC分类号： H01J37/32
CPC分类号： H01J37/32155 , H01J37/32183 , H01J2237/327
摘要： A high-frequency power supply apparatus includes a first power supply, a second power supply, a matching circuit, and a low-pass filter. The first power supply outputs a high-frequency voltage with a first fundamental frequency toward a load. The second power supply outputs, toward the load, a negative polarity voltage with a second fundamental frequency lower than the first fundamental frequency. The matching circuit is connected between the first power supply and the load. The matching circuit matches impedance on a side of the first power supply and impedance on a side of the load. The low-pass filter is connected between the second power supply and the load. The first power supply performs frequency modulation control by: performing frequency-modulation on the high-frequency voltage with a trapezoidal modulation signal whose frequency is equal to the second fundamental frequency, and outputting a modulated wave obtained by the frequency-modulation on the high-frequency voltage.
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公开(公告)号：US12020908B2
公开(公告)日：2024-06-25
申请号：US17663937
申请日：2022-05-18
发明人： Yung-chen Lin , Chi-I Lang , Ho-yung Hwang
IPC分类号： H01J37/32 , H01L21/3065
CPC分类号： H01J37/32467 , H01J37/32816 , H01L21/3065 , H01J2237/327 , H01J2237/3341
摘要： Embodiments of the present disclosure generally relate to methods for etching materials. In one or more embodiments, the method includes positioning a substrate in a process volume of a process chamber, where the substrate includes a metallic ruthenium layer disposed thereon, and exposing the metallic ruthenium layer to an oxygen plasma to produce a solid ruthenium oxide on the metallic ruthenium layer and a gaseous ruthenium oxide within the process volume. The method also includes exposing the solid ruthenium oxide to a secondary plasma to convert the solid ruthenium oxide to either metallic ruthenium or a ruthenium oxychloride compound. The metallic ruthenium is in a solid state on the metallic ruthenium layer or the ruthenium oxychloride compound is in a gaseous state within the process volume.
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公开(公告)号：US12014899B2
公开(公告)日：2024-06-18
申请号：US17911174
申请日：2021-03-04
IPC分类号： H01J37/32
CPC分类号： H01J37/32146 , H01J37/32174 , H01J2237/327
摘要： A high-frequency power supply device, which outputs high-frequency pulses to a target device on the basis of a synchronous pulse and a clock pulse, and the output control method therefor are such that a period reference signal is generated from output timing information pertaining to the synchronous pulse, an output level signal is generated from output level information, an output stop time is timed on the basis of the period reference signal and an output stop signal is generated, and, when the period reference signal, the output level signal, and the clock pulse are received and a high-frequency pulse is formed on the basis of these signals, transmission of the output level signal is stopped while the output stop signal is being received.
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公开(公告)号：US20240175117A1
公开(公告)日：2024-05-30
申请号：US18515610
申请日：2023-11-21
发明人： Ken OKOSHI , Yamato TONEGAWA , Jun OGAWA
CPC分类号： C23C14/12 , C23C14/02 , C23C14/54 , C23C14/5826 , H01J37/32449 , H01J2237/327 , H01J2237/3321
摘要： A film forming method includes performing a process including a) and b) a plurality of times, with a) being performed before b) in the process: a) supplying borazine-based gas to a substrate, thereby adsorbing the borazine-based gas to the substrate and b) exposing the substrate to a nitrogen plasma.
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公开(公告)号：US20240162003A1
公开(公告)日：2024-05-16
申请号：US18505133
申请日：2023-11-09
发明人： Chi-Wen CHEN , Chun-Huai LI , Chih-Hung CHEN , Chun-Hung HUNG
IPC分类号： H01J37/32
CPC分类号： H01J37/32073 , H01J37/32348 , H01J37/3244 , H01J37/32458 , H01J37/32981 , H01J2237/327 , H01J2237/332
摘要： A passivation equipment and a passivation method for a semiconductor device are provided in the present invention. The passivation equipment for the semiconductor device includes a chamber housing and a splitter disposed in the chamber housing. The splitter divides the chamber housing to a first chamber and a second chamber. The passivation equipment further includes a first intake tube connected to the first chamber, a plasma producing unit disposed in the first chamber and a pressure detecting unit connected to the first chamber. By using the passivation equipment of the present invention, high-pressure plasma is used to increase a passivation efficiency of the semiconductor device and decrease a temperature of a passivation reaction.
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