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公开(公告)号：US20190027637A1
公开(公告)日：2019-01-24
申请号：US16144287
申请日：2018-09-27
Inventor： Hirotaka Katayama , Wataru Shinohara , Keiichiro Masuko
IPC: H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/0747 , H01L31/20
Abstract: In a backside-junction type solar cell, polycrystalline silicon grains including at least one of amorphous silicon microcrystalline silicon, and polycrystalline silicon exist discretely over a passivation layer and a second conductivity type layer.
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