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公开(公告)号：US10546969B2
公开(公告)日：2020-01-28
申请号：US14718161
申请日：2015-05-21
Inventor： Naofumi Hayashi , Takahiro Mishima , Keiichiro Masuko
IPC: H01L21/00 , H01L31/075 , H01L31/0747 , H01L31/0224 , H01L31/18
Abstract: A solar cell is provided that comprising a semiconductor substrate having a first conductivity type; a first semiconductor layer having the first conductivity type, and on a principal surface of the semiconductor substrate; an insulation layer on the first semiconductor layer; a protective layer on the insulation layer; and a second semiconductor layer having a second conductivity type, and on the semiconductor substrate and the protective layer. A recessed region is positioned at a lateral side of the insulation layer, the recessed region formed by recessing a side surface of the insulation layer inward from a side surface of the first semiconductor layer and a side surface of the protective layer, and the second semiconductor layer is positioned in the recessed region above the first semiconductor layer in the recessed region.
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公开(公告)号：US10483429B2
公开(公告)日：2019-11-19
申请号：US15713586
申请日：2017-09-22
Inventor： Keiichiro Masuko
IPC: H01L21/00 , H01L31/20 , H01L31/0747 , H01L31/0216 , H01L31/0224 , H01L31/0376
Abstract: A method of manufacturing a solar cell includes: providing an insulating layer on a semiconductor layer provided on at least a part of a principle surface of a semiconductor substrate; providing a mask layer on the insulating layer; removing a part of the mask layer by laser irradiation so as to form a first opening through which the insulating layer is exposed; and removing, by an etching agent, the insulating layer exposed through the first opening so as to form a second opening through which the semiconductor layer is exposed.
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公开(公告)号：US10672931B2
公开(公告)日：2020-06-02
申请号：US16143769
申请日：2018-09-27
Inventor： Keiichiro Masuko , Wataru Shinohara
IPC: H01L31/047 , H01L31/0747 , H01L31/0376 , H01L31/0352 , H01L31/0224
Abstract: A solar cell is equipped with: a wafer; an n-type laminated body that is provided on the first main surface side of the wafer; and a p-type laminated body, which is provided on the first main surface side of the wafer such that the p-type laminated body is adjacent to the n-type laminated body in the X direction, and which extends in the Y direction. The wafer has: a lightly doped region that is doped to be n type; and a plurality of first main surface-side highly doped regions, which have an n-type dopant concentration that is higher than that of the lightly doped region, and which are provided between the lightly doped region and the p-type laminated body. The first main surface-side highly doped regions are discretely provided at intervals in the Y direction.
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4.发明申请公开(公告)号：US20180219116A1
公开(公告)日：2018-08-02
申请号：US15937273
申请日：2018-03-27
Inventor： Keiichiro Masuko
IPC: H01L31/05 , H01L31/0224 , H01L31/18
CPC classification number: H01L31/0516 , H01L31/0224 , H01L31/022433 , H01L31/022441 , H01L31/022466 , H01L31/0481 , H01L31/05 , H01L31/0508 , H01L31/0747 , H01L31/1884 , Y02E10/50 , Y02P70/521
Abstract: A solar cell module includes a plurality of solar cells. A plurality of finger electrodes for a first electrode are provided on a principal surface of a semiconductor substrate of the solar cell. A bus bar electrode for the first electrode is provided on the principal surface of the semiconductor substrate and is connected to the plurality of finger electrodes for the first electrode. The bus bar electrode for the first electrode extends beyond the semiconductor substrate toward an adjacent further solar cell. A portion of the bus bar electrode for the first electrode provided on the principal surface of the semiconductor substrate and a portion of the bus bar electrode for the first electrode extending beyond the semiconductor substrate are formed to be integrated with each other.
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公开(公告)号：USD894823S1
公开(公告)日：2020-09-01
申请号：US29658451
申请日：2018-07-31
Designer： Naoki Yoshimura , Keiichiro Masuko , Daisuke Fujishima , Masato Shigematsu
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Patent Agency Ranking
公开(公告)号：US20190027637A1
公开(公告)日：2019-01-24
申请号：US16144287
申请日：2018-09-27
Inventor： Hirotaka Katayama , Wataru Shinohara , Keiichiro Masuko
IPC: H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/0747 , H01L31/20
Abstract: In a backside-junction type solar cell, polycrystalline silicon grains including at least one of amorphous silicon microcrystalline silicon, and polycrystalline silicon exist discretely over a passivation layer and a second conductivity type layer.
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公开(公告)号：US20190027630A1
公开(公告)日：2019-01-24
申请号：US16143769
申请日：2018-09-27
Inventor： Keiichiro Masuko , Wataru Shinohara
IPC: H01L31/0747
Abstract: A solar cell is equipped with: a wafer; an n-type laminated body that is provided on the first main surface side of the wafer; and a p-type laminated body, which is provided on the first main surface side of the wafer such that the p-type laminated body is adjacent to the n-type laminated body in the X direction, and which extends in the Y direction. The wafer has: a lightly doped region that is doped to be n type; and a plurality of first main surface-side highly doped regions, which have an n-type dopant concentration that is higher than that of the lightly doped region, and which are provided between the lightly doped region and the p-type laminated body. The first main surface-side highly doped regions are discretely provided at intervals in the Y direction.
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公开(公告)号：USD894824S1
公开(公告)日：2020-09-01
申请号：US29658454
申请日：2018-07-31
Designer： Naoki Yoshimura , Keiichiro Masuko , Daisuke Fujishima , Masato Shigematsu
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公开(公告)号：US20190006534A1
公开(公告)日：2019-01-03
申请号：US16101788
申请日：2018-08-13
Inventor： Kazunori Fujita , Daisuke Fujishima , Yasufumi Tsunomura , Mikio Taguchi , Keiichiro Masuko
IPC: H01L31/0216 , H01L31/18 , H01L31/0224 , H01L31/0368
Abstract: According to one example of an embodiment of the present invention, a solar cell is provided with an n-type crystalline silicon wafer; a first passivation layer, which is formed on the light receiving surface of the n-type crystalline silicon wafer, and which is configured by having, as a main component, silicon oxide, silicon carbide, or silicon nitride; an n-type crystalline silicon layer formed on the first passivation layer; a second passivation layer formed on the rear surface of the n-type crystalline silicon wafer; and a p-type amorphous silicon layer formed on the second passivation layer.
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公开(公告)号：US09786809B2
公开(公告)日：2017-10-10
申请号：US15271231
申请日：2016-09-21
Inventor： Keiichiro Masuko
IPC: H01L31/18 , H01L31/0224
CPC classification number: H01L31/1884 , H01L31/022425 , H01L31/022441 , H01L31/1892 , H02S40/44 , Y02E10/50
Abstract: A method of forming an electrode pattern includes: forming, on a base material, a seed layer having a pattern corresponding to the electrode pattern; forming an organic material layer on the seed layer; producing an electrode layer transfer sheet by forming an electrode layer on the organic material layer via an electroplating process using the seed layer as a seed; disposing the electrode layer transfer sheet on a substrate on which the electrode pattern is to be formed such that the electrode layer is in contact with the substrate and pressure bonding the electrode layer to the substrate; and in a state in which the electrode layer is pressure bonded to the substrate, removing the base material along with the organic material layer and the seed layer to transfer the electrode layer to the substrate.
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