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公开(公告)号：US20210193714A1
公开(公告)日：2021-06-24
申请号：US17191437
申请日：2021-03-03
Inventor： Yoshihiro SATO , Yoshinori TAKAMI , Ryota SAKAIDA
IPC: H01L27/146
Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.
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公开(公告)号：US20240347562A1
公开(公告)日：2024-10-17
申请号：US18750838
申请日：2024-06-21
Inventor： Yoshihiro SATO , Yoshinori TAKAMI , Ryota SAKAIDA
IPC: H01L27/146
CPC classification number: H01L27/14614 , H01L27/14607 , H01L27/1463 , H01L27/14643
Abstract: An imaging device includes: a photoelectric converter that converts light into a charge; a first diffusion region of a first conductivity type to which the charge is input; a second diffusion region of the first conductivity type; a first contact that is directly connected to the first diffusion region; a second contact that is directly connected to the second diffusion region; a first transistor that includes the first diffusion region as one of a source and a drain and that includes a first gate; and a second transistor that includes the second diffusion region as one of a source and a drain and that includes a second gate. A dimension of the second contact in a direction parallel to a width direction of the second gate is greater than a dimension of the first contact in a direction parallel to a width direction of the first gate.
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公开(公告)号：US20210074768A1
公开(公告)日：2021-03-11
申请号：US17013289
申请日：2020-09-04
Inventor： Yoshihiro SATO , Satoshi SHIBATA , Ryota SAKAIDA
Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.
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Patent Agency Ranking
公开(公告)号：US20230097421A1
公开(公告)日：2023-03-30
申请号：US18061233
申请日：2022-12-02
Inventor： Yoshihiro SATO , Satoshi SHIBATA , Ryota SAKAIDA
Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.
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公开(公告)号：US20190244959A1
公开(公告)日：2019-08-08
申请号：US16384575
申请日：2019-04-15
Inventor： Yoshihiro SATO , Ryota SAKAIDA , Satoshi SHIBATA , Taiji NODA
IPC: H01L27/092 , H01L27/146
CPC classification number: H01L27/0922 , H01L27/14612 , H01L27/14621 , H01L27/14643
Abstract: An imaging device includes: a semiconductor substrate including a first impurity region and a second impurity region; a first insulating layer on a portion of a surface of the semiconductor substrate; a second insulating layer on another portion of the surface of the semiconductor substrate, a thickness of the first insulating layer being greater than a thickness of the second insulating layer; a first transistor including: a first gate electrode facing the surface of the semiconductor substrate via the first insulating layer; the first impurity region as one of a source and a drain; and the second impurity region as the other of the source and the drain; and a photoelectric converter electrically connected to the first impurity region. The first insulating layer covers the first impurity region, and the second insulating layer covers the second impurity region.
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公开(公告)号：US20250089436A1
公开(公告)日：2025-03-13
申请号：US18957246
申请日：2024-11-22
Inventor： Yoshihiro SATO , Satoshi SHIBATA , Ryota SAKAIDA
Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.
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公开(公告)号：US20230317746A1
公开(公告)日：2023-10-05
申请号：US18330197
申请日：2023-06-06
Inventor： Yoshihiro SATO , Yoshinori TAKAMI , Ryota SAKAIDA
IPC: H01L27/146
CPC classification number: H01L27/14614 , H01L27/1463 , H01L27/14607 , H01L27/14643
Abstract: An imaging device including: a photoelectric converter that converts light into a charge; a first diffusion region of a first conductivity type to which the charge is input; a second diffusion region of the first conductivity type; a first plug that has a first surface directly connected to the first diffusion region; and a second plug that has a second surface directly connected to the second diffusion region, where an area of the second surface of the second plug is larger than an area of the first surface of the first plug in a plan view.
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公开(公告)号：US20150076500A1
公开(公告)日：2015-03-19
申请号：US14553559
申请日：2014-11-25
Inventor： Ryota SAKAIDA , Nobuyoshi TAKAHASHI , Kosaku SAEKI
CPC classification number: H01L27/307 , H01L21/28525 , H01L21/76889 , H01L21/76895 , H01L21/76897 , H01L23/485 , H01L27/14612 , H01L27/14643 , H01L51/441 , H01L2924/0002 , H01L2924/00
Abstract: Each imaging pixel provided in a solid-state imaging device includes a charge accumulation part which is a diffusion region formed in a substrate, a gate electrode formed lateral to the charge accumulation part on the substrate, an insulating film formed on the charge accumulation part, and a contact plug connected to the charge accumulation part so as to penetrate the insulating film and made of semiconductor. The contact plug is, at a lower part thereof, embedded in the insulating film, and is, at an upper part thereof, exposed through the insulating film. Silicide is formed on the upper part of the contact plug, and the charge accumulation part and the gate electrode are covered by the insulating film.
Abstract translation: 提供在固态成像装置中的每个成像像素包括电荷累积部分，其是形成在衬底中的扩散区域，形成在衬底上的电荷累积部分侧面的栅电极，形成在电荷累积部分上的绝缘膜， 以及连接到电荷累积部分以便穿透绝缘膜并由半导体制成的接触插塞。 接触插塞在其下部嵌入绝缘膜，并且在其上部通过绝缘膜露出。 硅化物形成在接触插塞的上部，电荷累积部分和栅电极被绝缘膜覆盖。
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