公开(公告)号：US20200255977A1

公开(公告)日：2020-08-13

申请号：US16637553

申请日：2018-11-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKAHIDE HIRASAKI ,  DAISUKE SUETSUGU ,  TAKAFUMI OKUMA

IPC: C30B29/38 ,  C30B29/42 ,  C30B29/44 ,  C30B29/20 ,  C30B29/36 ,  C30B29/22 ,  C30B25/18 ,  C30B25/06 ,  C23C14/34 ,  C23C14/06

Abstract: A composite nitride-based film structure includes a bulk single crystal, a plurality of nitride microcrystals, and an amorphous nitride thin film. The plurality of nitride microcrystals is provided on the bulk single crystal, and has a specific orientation relationship with a crystal structure of the bulk single crystal. The nitride thin film is provided on the bulk single crystal, surrounds the nitride microcrystal, and covers a surface of the bulk single crystal.

公开(公告)号：US20190169738A1

公开(公告)日：2019-06-06

申请号：US16205166

申请日：2018-11-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKAFUMI OKUMA ,  DAISUKE SUETSUGU ,  TAKAHIDE HIRASAKI

IPC: C23C14/34 ,  H01L21/02 ,  C23C14/06 ,  C23C14/00

Abstract: To provide a sputtering method as a reactive sputtering method of forming a thin film by allowing a target material to react with a gas, in which film deposition conditions are narrowed down from an existing period of nitrogen radicals by focusing on a nitriding process in thin-film forming processes when the thin film is formed by pulsing a waveform of electric current from a DC power supply at the time of generating plasma and applying the electric current to the target material.