公开(公告)号：US12302652B2

公开(公告)日：2025-05-13

申请号：US17483655

申请日：2021-09-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takayoshi Yamada ,  Yoshihiro Sato ,  Taiji Noda

IPC: H10F39/00 ,  H10F39/18

Abstract: An imaging device includes a semiconductor substrate and pixels, which includes a first pixel and second pixels adjacent thereto. Each of the pixels includes a first photoelectric conversion layer, a first pixel electrode, a first plug that electrically connects the semiconductor substrate and the first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, and a second plug that electrically connects the semiconductor substrate and the second pixel electrode. In the first pixel and the plurality of second pixels, a distance between the closest plugs of the first plugs and the second plugs is larger than or equal to one-half of a pixel pitch, when viewed in a normal direction of the semiconductor substrate.

公开(公告)号：US10446549B2

公开(公告)日：2019-10-15

申请号：US16384575

申请日：2019-04-15

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshihiro Sato ,  Ryota Sakaida ,  Satoshi Shibata ,  Taiji Noda

IPC: H01L27/092 ,  H01L27/146

Abstract: An imaging device includes: a semiconductor substrate including a first impurity region and a second impurity region; a first insulating layer on a portion of a surface of the semiconductor substrate; a second insulating layer on another portion of the surface of the semiconductor substrate, a thickness of the first insulating layer being greater than a thickness of the second insulating layer; a first transistor including: a first gate electrode facing the surface of the semiconductor substrate via the first insulating layer; the first impurity region as one of a source and a drain; and the second impurity region as the other of the source and the drain; and a photoelectric converter electrically connected to the first impurity region. The first insulating layer covers the first impurity region, and the second insulating layer covers the second impurity region.

公开(公告)号：US10304828B2

公开(公告)日：2019-05-28

申请号：US15698019

申请日：2017-09-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sato ,  Ryota Sakaida ,  Satoshi Shibata ,  Taiji Noda

IPC: H01L27/092 ,  H01L27/146

Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.