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公开(公告)号：US10057518B2
公开(公告)日：2018-08-21
申请号：US15423397
申请日：2017-02-02
CPC分类号： H04N5/359 , H01L27/14603 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14645 , H01L27/14667 , H04N5/23232 , H04N5/265 , H04N5/357 , H04N5/361 , H04N5/374 , H04N5/378
摘要： An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the counter voltage and a voltage of the pixel electrode.
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公开(公告)号：US11532652B2
公开(公告)日：2022-12-20
申请号：US16897509
申请日：2020-06-10
IPC分类号： H01L27/146 , H04N5/378 , H04N5/353 , H01L27/30
摘要： An imaging device includes a photoelectric conversion layer having a first surface and a second surface opposite to the first surface; a counter electrode on the first surface; a first electrode on the second surface; a second electrode on the second surface, the second electrode being spaced from the first electrode; and an auxiliary electrode on the second surface between the first electrode and the second electrode. The auxiliary electrode is spaced from the first electrode and the second electrode, where a shortest distance between the first electrode and the auxiliary electrode is different from a shortest distance between the second electrode and the auxiliary electrode.
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公开(公告)号：US11070752B2
公开(公告)日：2021-07-20
申请号：US15867986
申请日：2018-01-11
发明人： Kazuko Nishimura , Sanshiro Shishido , Hidenari Kanehara , Takayoshi Yamada , Masashi Murakami , Yasunori Inoue
IPC分类号： H04N5/355 , H01L27/146 , H04N5/363 , H04N5/378 , H01L29/423 , H04N5/225 , H04N5/235 , H04N5/335
摘要： An imaging device includes: a first imaging cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal processing circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second imaging cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal processing circuit that is electrically connected to the second photoelectric converter and detects the second signal. Sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell. The first signal processing circuit has a circuit configuration different from the second signal processing circuit. An operation frequency of the first signal processing circuit is different from an operation frequency of the second signal processing circuit.
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公开(公告)号：US20210203867A1
公开(公告)日：2021-07-01
申请号：US17202060
申请日：2021-03-15
发明人： Takayoshi Yamada , Yasuo MIYAKE , Masashi MURAKAMI
IPC分类号： H04N5/363 , H04N5/378 , H04N5/351 , H01L27/146 , H04N5/3745 , H04N5/357 , H04N5/353 , H04N5/374
摘要： An imaging device including a photoelectric converter that converts incident light into an electric charge; a transfer transistor; a first node coupled to the photoelectric converter via the transfer transistor; a first signal detection transistor having a gate coupled to the first node; a second signal detection transistor having a gate coupled to the photoelectric converter; a signal line coupled to one of a source and a drain of the first signal detection transistor; a first transistor coupled to the first node; and a second transistor coupled to the photoelectric converter, wherein one of the source and the drain of the first signal detection transistor is coupled to the first transistor, one of a source and a drain of the second signal detection transistor is coupled to the second transistor, and no transistor is coupled between the photoelectric converter and the gate of the second signal detection transistor.
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公开(公告)号：US10720457B2
公开(公告)日：2020-07-21
申请号：US16164590
申请日：2018-10-18
IPC分类号： H01L27/146 , H04N5/378 , H04N5/353 , H01L27/30
摘要： An imaging device includes a pixel comprising a photoelectric conversion layer having a first surface and a second surface opposite to the first surface; a pixel electrode on the first surface; an auxiliary electrode on the first surface, the auxiliary electrode being spaced from the pixel electrode; an upper electrode on the second surface, the upper electrode facing the pixel electrode and the auxiliary electrode; and an amplification transistor having a gate coupled to the pixel electrode. The imaging device also includes voltage application circuitry that generates a first voltage and a second voltage different from the first voltage, the voltage application circuitry being coupled to the auxiliary electrode. The voltage application circuitry selectively supplies either the first voltage or the second voltage to the auxiliary electrode.
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公开(公告)号：US10165206B2
公开(公告)日：2018-12-25
申请号：US15852874
申请日：2017-12-22
IPC分类号： H04N5/369 , H04N5/232 , H04N5/355 , H01L27/146 , H04N5/357
摘要： An imaging device which includes a counter electrode, a first pixel electrode facing the counter electrode, a second pixel electrode facing the counter electrode, a photoelectric conversion layer sandwiched between the first pixel electrode and the second pixel electrode, and the counter electrode, a first signal detection circuit electrically connected to the second pixel electrode, and a first switching element connected between the first pixel electrode and the first signal detection circuit.
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公开(公告)号：US10142570B1
公开(公告)日：2018-11-27
申请号：US16040905
申请日：2018-07-20
IPC分类号： H04N5/232 , H01L27/146 , H04N5/359 , H04N5/378 , H04N5/357 , H04N5/361 , H04N5/374 , H04N5/265
摘要： An imaging device including at least one pixel, where each of the at least one pixels includes a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface; a first electrode located on the first surface; a second electrode located on the first surface, the second electrode being separated from the first electrode, a first voltage being applied to the second electrode; a third electrode located on the second surface, the third electrode opposing to the first electrode and the second electrode, a second voltage being applied to the third electrode; and an amplifier transistor having a gate electrically connected to the first electrode, where an absolute value of a difference between the first voltage and the second voltage is larger than an absolute value of a difference between the second voltage and a voltage of the first electrode.
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公开(公告)号：US10979658B2
公开(公告)日：2021-04-13
申请号：US16255679
申请日：2019-01-23
发明人： Takayoshi Yamada , Yasuo Miyake , Masashi Murakami
IPC分类号： H04N5/363 , H04N5/378 , H04N5/351 , H01L27/146 , H04N5/3745 , H04N5/357 , H04N5/353 , H04N5/374
摘要： An imaging device according to the present disclosure includes a photoelectric converter that converts light into an electric charge; a transfer transistor; a charge accumulation node coupled to the photoelectric converter via the transfer transistor; a first signal detection transistor having a gate coupled to the charge accumulation node; a first reset transistor one of a source and a drain of which is coupled to the charge accumulation node; and a second reset transistor one of a source and a drain of which is coupled to the photoelectric converter, wherein one of a source and a drain of the first signal detection transistor is coupled to the other of the source and the drain of the first reset transistor and the other of the source and drain of the second reset transistor.
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公开(公告)号：US10141354B2
公开(公告)日：2018-11-27
申请号：US14876500
申请日：2015-10-06
IPC分类号： H04N5/335 , H01L27/146 , H04N5/378 , H04N5/353 , H01L27/30
摘要： An imaging device, comprising: at least one unit pixel cell; and a voltage application circuit that generates at least two different voltages, each of the at least one unit pixel cell comprising: a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface, a pixel electrode located on the first surface, an auxiliary electrode located on the first surface, the auxiliary electrode being separated from the pixel electrode and electrically connected to the voltage application circuit, an upper electrode located on the second surface, the upper electrode opposing to the pixel electrode and the auxiliary electrode, a charge storage node electrically connected to the pixel electrode, and a charge detection circuit electrically connected to the charge storage node.
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公开(公告)号：US09894297B2
公开(公告)日：2018-02-13
申请号：US15406824
申请日：2017-01-16
IPC分类号： H04N5/355 , H04N5/369 , H04N5/3745 , H04N5/376
CPC分类号： H04N5/35563 , H04N5/3559 , H04N5/3696 , H04N5/374 , H04N5/37452 , H04N5/376
摘要： An imaging device includes a pixel cell including: a first photoelectric converter that generates a first electrical signal; and a first signal detection circuit that detects the first electrical signal. The first signal detection circuit includes: a first transistor one of a source and a drain of which is electrically connected to the first photoelectric converter; a first capacitor having first and second ends, the first end being electrically connected to the other of the source and the drain of the first transistor, a reference voltage being applied to the second end; and a second transistor having a gate electrically connected to the first photoelectric converter. The pixel cell outputs, in one frame period, a first image signal and a second image signal in sequence, the first image signal being output when the first transistor is off, the second image signal being output when the first transistor is on.
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