公开(公告)号：US09001557B2

公开(公告)日：2015-04-07

申请号：US13990209

申请日：2012-11-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Ken Kawai ,  Kazuhiko Shimakawa ,  Yoshikazu Katoh ,  Yuichiro Ikeda

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/00 ,  G11C13/004 ,  G11C13/0064 ,  G11C2013/0073 ,  G11C2013/0092

Abstract: Provided is a method of writing to a variable resistance nonvolatile memory element which is capable of both improving retention characteristics and enlarging a window of operation. In the method of writing, to write “1” data (LR), first a weak HR writing process is performed in which a weak HR writing voltage pulse set for changing the variable resistance nonvolatile memory element to an intermediate resistance state is applied and, subsequently, a LR writing process is performed in which a LR writing voltage pulse set for changing the variable resistance nonvolatile memory element from the intermediate resistance state to a LR state is applied.

Abstract translation: 提供一种写入能够改善保持特性和扩大操作窗口的可变电阻非易失性存储元件的方法。 在写入方法中，为了写入“1”数据（LR），首先执行将用于将可变电阻非易失性存储元件变更为中间电阻状态而设定的弱的HR写入电压脉冲的弱的HR写入处理， 随后，执行LR写入处理，其中设置用于将可变电阻非易失性存储元件从中间电阻状态改变为LR状态的LR写入电压脉冲。