公开(公告)号：US11257918B2

公开(公告)日：2022-02-22

申请号：US16723761

申请日：2019-12-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yusuke Kanda ,  Hideyuki Okita ,  Manabu Yanagihara ,  Takeshi Harada

IPC: H01L29/778 ,  H01L29/45 ,  H01L21/285 ,  H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: A semiconductor device includes a substrate; a first nitride semiconductor layer above the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer; an ohmic electrode above the substrate; and a contact layer in contact with at least a part of the ohmic electrode, the contact layer containing silicon and chlorine. The second nitride semiconductor layer has a wider band gap than the first nitride semiconductor layer. A two-dimensional electron gas channel is formed in the first nitride semiconductor layer at a heterointerface between the first nitride semiconductor layer and the second nitride semiconductor layer. A silicon concentration has a higher peak value than a chlorine concentration in the contact layer.