公开(公告)号：US10923560B2

公开(公告)日：2021-02-16

申请号：US16259102

申请日：2019-01-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takahiro Koyanagi ,  Yuuko Tomekawa ,  Takeshi Harada ,  Yoshio Kawashima

IPC: H01L21/00 ,  H01L49/02 ,  H01L21/3215 ,  H01L21/285 ,  H01L21/02 ,  H01L27/146 ,  H01L27/108

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode and which is in contact with the first electrode. The first electrode includes a first portion including an interface between the first electrode and the dielectric layer, the dielectric layer includes a second portion including the interface, and the first portion and the second portion each contain silicon. A concentration distribution of the silicon along a thickness direction of the first portion and the second portion includes a convex portion intersecting the interface.

公开(公告)号：US10607840B2

公开(公告)日：2020-03-31

申请号：US15926636

申请日：2018-03-20

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Takeshi Harada ,  Koji Utaka

IPC: H01L29/45 ,  H01L21/28 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/32 ,  H01L29/06 ,  H01L29/66 ,  H01L29/10 ,  H01L29/778 ,  H01L21/285 ,  H01L27/098 ,  H01L29/808 ,  H01L29/812 ,  H01L29/20

Abstract: A semiconductor device includes: a substrate; a p-type GaN layer that is formed above the substrate, and includes GaN containing p-type impurities; and a Ti film formed on a surface of the p-type GaN layer. The Ti film includes a Ti film containing no nitrogen and a nitrogen-containing Ti film that is less chemically active than such Ti film. The nitrogen-containing Ti film continuously surrounds an outer periphery of the Ti film containing no nitrogen in a planar view.

公开(公告)号：US11257918B2

公开(公告)日：2022-02-22

申请号：US16723761

申请日：2019-12-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yusuke Kanda ,  Hideyuki Okita ,  Manabu Yanagihara ,  Takeshi Harada

IPC: H01L29/778 ,  H01L29/45 ,  H01L21/285 ,  H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: A semiconductor device includes a substrate; a first nitride semiconductor layer above the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer; an ohmic electrode above the substrate; and a contact layer in contact with at least a part of the ohmic electrode, the contact layer containing silicon and chlorine. The second nitride semiconductor layer has a wider band gap than the first nitride semiconductor layer. A two-dimensional electron gas channel is formed in the first nitride semiconductor layer at a heterointerface between the first nitride semiconductor layer and the second nitride semiconductor layer. A silicon concentration has a higher peak value than a chlorine concentration in the contact layer.