公开(公告)号：US20130171334A1

公开(公告)日：2013-07-04

申请号：US13807893

申请日：2011-07-01

Applicant: Pascal Bruna ,  Denis Busardo ,  Frédéric Guernalec

Inventor： Pascal Bruna ,  Denis Busardo ,  Frédéric Guernalec

IPC: C23C14/48

CPC classification number: C23C14/48 ,  A61F9/00 ,  A61L2/16 ,  B05B11/3001 ,  B05B15/18 ,  B65D83/48 ,  C03C23/0055 ,  C08J7/123 ,  C08J7/18

Abstract: A method of surface treating a fluid dispenser device, the method including a step of modifying at least one surface to be treated of at least a portion of the device by ionic implantation using multi-charged and multi-energy ion beams. The modified surface to be treated has anti-friction properties, the multi-charged ions are selected from helium (He), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), and ionic implantation is carried out to a depth of 0 μm to 3 μm.

Abstract translation: 一种表面处理流体分配装置的方法，所述方法包括通过使用多电荷和多能离子束的离子注入来修饰所述装置的至少一部分的待处理的至少一个表面的步骤。 经处理的改性表面具有抗摩擦性能，多电荷离子选自氦（He），氮（N），氧（O），氖（Ne），氩（Ar），氪（Kr） 和氙（Xe），离子注入进行到0〜3μm的深度。

公开(公告)号：US20130149459A1

公开(公告)日：2013-06-13

申请号：US13807888

申请日：2011-07-01

Applicant: Pascal Bruna ,  Denis Busardo

Inventor： Pascal Bruna ,  Denis Busardo

IPC: B01J19/08

CPC classification number: B01J19/085 ,  A61M15/00 ,  A61M2205/0205 ,  B05B11/0005 ,  B65D81/24 ,  B65D83/75 ,  C03C23/0055 ,  C08J7/123 ,  C08J7/18 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/2004

Abstract: A method of surface treating a fluid dispenser device, the method including a step of modifying, by ion implantation using multi-charged and multi-energy ion beams, at least one surface to be treated of at least a portion of the device in contact with the fluid. The modified surface has properties limiting the formation of a biofilm and thus the appearance and/or proliferation of bacteria on the modified surface, the multi-charged ions being selected from helium, boron, carbon, nitrogen, oxygen, neon, argon, krypton, and xenon, ionic implantation being carried out to a depth of 0 μm to 3 μm.

Abstract translation: 一种表面处理流体分配装置的方法，该方法包括通过使用多电荷和多能离子束的离子注入来修饰至少一个待处理表面的步骤，所述至少一个待处理表面与装置的至少一部分接触 流体。 改性表面具有限制生物膜的形成，从而限制细菌在改性表面上的外观和/或增殖的性质，多电荷离子选自氦，硼，碳，氮，氧，氖，氩，氪， 并且氙，离子注入进行到0〜3μm的深度。

公开(公告)号：US20130115449A1

公开(公告)日：2013-05-09

申请号：US13810373

申请日：2011-07-01

Applicant: Denis Busardo

Inventor： Denis Busardo

IPC: B05D3/06 ,  B32B15/04

CPC classification number: B05D3/068 ,  B32B15/04 ,  C08J7/123 ,  C23C14/48 ,  Y10T428/273

Abstract: A method of grafting monomers (M) in a deep layer (1) in an organic material by using an ion beam (X), wherein the ion dose per unit area is selected so as to be in the range of 1012 ions/cm2 to 1018 ions/cm2 so as to create a reservoir of free radicals (1) within a large thickness in the range 0 nm to 3000 nm. Hydrophilic and/or hydrophobic and/or antibacterial monomers (M) are grafted in the reservoir of free radicals (1). Organic materials with hydrophobic, hydrophilic, and/or antibacterial properties that are effective for long-term use are thus advantageously obtained.

Abstract translation: 通过使用离子束（X）在有机材料的深层（1）中接枝单体（M）的方法，其中每单位面积的离子剂量选择为1012离子/ cm 2至 1018离子/ cm 2，以便在0nm至3000nm范围内的大厚度内形成自由基（1）的储存器。 亲水和/或疏水和/或抗菌单体（M）被接枝在自由基储存器（1）中。 因此有利地获得了对于长期使用有效的具有疏水性，亲水性和/或抗菌性质的有机材料。

公开(公告)号：US20130112553A1

公开(公告)日：2013-05-09

申请号：US13808815

申请日：2011-07-01

Applicant: Denis Busardo ,  Frédéric Guernalec

Inventor： Denis Busardo ,  Frédéric Guernalec

IPC: C23C14/48

CPC classification number: C23C14/48 ,  H01J37/3171 ,  H01J2237/316 ,  H01J2237/3165

Abstract: A treatment method for treating at least one surface of a solid polymer part wherein multi-energy ions X+ and X2+ are implanted simultaneously, where X is the atomic symbol selected from the list constituted by helium (He), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), and wherein the ratio RX, where RX=X+/X2+, with X+ and X2+ expressed as atomic percentages, is less than or equal to 100, for example less than 20. This results in very significant reductions in the surface resistivity of the parts treated in this way, the appearance of antistatic properties or of electrostatic charge dissipation properties. By way of example, the ions X+ and X2+ are supplied by an ECR source.

Abstract translation: 一种用于处理其中多能离子X +和X2 +同时注入的固体聚合物部分的至少一个表面的处理方法，其中X是从由氦（He），氮（N），氧（ O），氖（Ne），氩（Ar），氪（Kr）和氙（Xe），其中RX = X + / X2 +与X +和X2 +以原子百分比表示的比RX小于或等于 等于100，例如小于20.这导致以这种方式处理的部件的表面电阻率的非常显着的降低，抗静电性能或静电电荷耗散性质的出现。 作为示例，离子X +和X2 +由ECR源提供。

公开(公告)号：US20100187445A1

公开(公告)日：2010-07-29

申请号：US12677548

申请日：2008-09-11

Applicant: Denis Busardo

Inventor： Denis Busardo

IPC: H01J37/317 ,  H01J37/02

CPC classification number: C23C14/0641 ,  C23C14/48 ,  H01L21/3215

Abstract: The invention relates to a method for treating a metal deposit to reduce or eliminate the porosity thereof by bombarding the same with an ion source. The source is, for example, an electron cyclotron resonance (RCE) source. The metal can be gold. The ion bombardment has the effect of sealing the porosity of the metal deposit according to the type, energy, amount and angle of incidence of the ions.

Abstract translation: 本发明涉及一种通过用离子源轰击金属沉积物来减少或消除其孔隙率的方法。 源是例如电子回旋共振（RCE）源。 金属可以是金。 离子轰击具有根据离子的类型，能量，数量和入射角密封金属沉积物的孔隙度的作用。

公开(公告)号：US20130171330A1

公开(公告)日：2013-07-04

申请号：US13807872

申请日：2011-07-01

Applicant: Zakaria Sallak ,  Denis Busardo ,  Frédéric Guernalec

Inventor： Zakaria Sallak ,  Denis Busardo ,  Frédéric Guernalec

IPC: C23C14/48

CPC classification number: C23C14/48 ,  A61L2/14 ,  A61M15/00 ,  A61M2205/0233 ,  C03C23/0055 ,  C08J7/123 ,  C08J2323/06 ,  C08J2323/12 ,  C08J2327/06 ,  C08J2327/18

Abstract: A method of surface treating a fluid dispenser device, said method comprising a step of modifying at least one surface to be treated of at least a portion of said device in contact with said fluid by ionic implantation using multi-charged and multi-energy ion beams, said modified surface to be treated having non-stick properties for said fluid, said multi-charged ions being selected from helium (He), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), ionic implantation being carried out to a depth of 0 μm to 3 μm.

Abstract translation: 一种表面处理流体分配装置的方法，所述方法包括通过使用多电荷和多能离子束的离子注入来修饰与所述流体接触的所述装置的至少一部分的待处理的至少一个表面的步骤 所述多电荷离子选自氦（He），氮（N），氧（O），氖（Ne），氩（Ar），氪 （Kr）和氙（Xe），离子注入进行到0〜3μm的深度。

公开(公告)号：US20110236592A1

公开(公告)日：2011-09-29

申请号：US13132190

申请日：2009-11-30

Applicant: Denis Busardo

Inventor： Denis Busardo

IPC: C23C14/48

CPC classification number: C23C14/48 ,  C23C8/20 ,  C23C8/22 ,  C23C8/24 ,  C23C8/26 ,  C23C8/36 ,  C23C8/38 ,  C23C10/06 ,  C23C14/0641

Abstract: The present invention relates to a method for treating a metal element subjected to an ion beam, where: the ions of the beam are selected from among boron, carbon, nitrogen, and oxygen; the ion acceleration voltage, greater than or equal to 10 kV, and the power of the beam, between 1 W and 10 kW, as well as the ion load per surface unit are selected so as to enable the implantation of ions onto an implantation area with a thickness eI of 0.05 μm to 5 μm, and also enable the diffusion of ions into an implantation/diffusion area with a thickness eI+eP, of 0.1 μm to 1,000 μm; the temperature TZF of the area of the metal element located under the implantation/diffusion area is less than or equal to a threshold temperature TSD. In this manner, metal surfaces having remarkable mechanical characteristics are advantageously produced.

Abstract translation: 本发明涉及一种用于处理经受离子束的金属元素的方法，其中：束的离子选自硼，碳，氮和氧; 选择大于或等于10kV的离子加速电压，以及在1W和10kW之间的光束功率以及每个表面单元的离子负载，使得能够将离子注入到注入区域 其厚度eI为0.05〜5μm，并且还能够将离子扩散至厚度eI + eP为0.1μm〜1000μm的注入/扩散区域; 位于植入/扩散区域下方的金属元件的区域的温度TZF小于或等于阈值温度TSD。 以这种方式，有利地生产具有显着机械特性的金属表面。

公开(公告)号：US20130164435A1

公开(公告)日：2013-06-27

申请号：US13807890

申请日：2011-07-01

Applicant: Marie Legoguelin ,  Patrice Leone ,  Denis Busardo ,  Frédéric Guernalec

Inventor： Marie Legoguelin ,  Patrice Leone ,  Denis Busardo ,  Frédéric Guernalec

IPC: C23C14/48

CPC classification number: C23C14/48 ,  A61M15/00 ,  A61M2205/0222 ,  A61M2205/0233 ,  A61M2205/025 ,  C08J7/123 ,  C08J2323/06

Abstract: A method of treating an elastomer surface of a fluid dispenser device, said method comprising a step of modifying at least one elastomer surface to be treated of said device by ionic implantation using multi-charged and multi-energy ion beams, said modified elastomer surface limiting adhesion of the elastomer surfaces during the manufacturing and/or assembly stages, said multi-charged ions being selected from helium (He), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), ionic implantation being carried out to a depth of 0 μm to 3 μm.

Abstract translation: 一种处理流体分配装置的弹性体表面的方法，所述方法包括通过使用多电荷和多能离子束的离子注入来修饰待处理的所述装置的至少一个弹性体表面的步骤，所述改性弹性体表面限制 所述多电荷离子选自氦（He），氮（N），氧（O），氖（Ne），氩（Ar），氪（Kr） ）和氙（Xe），离子注入进行到0〜3μm的深度。

公开(公告)号：US20110318576A1

公开(公告)日：2011-12-29

申请号：US13254705

申请日：2010-03-05

Applicant: Denis Busardo ,  Frederic Guernalec

Inventor： Denis Busardo ,  Frederic Guernalec

IPC: C23C14/20 ,  B32B27/06

CPC classification number: C08J7/123 ,  B05D1/60 ,  B05D3/14 ,  B05D5/08 ,  B05D7/04 ,  C08J2321/00 ,  C23C14/48 ,  Y10T428/265

Abstract: The invention relates to a method for treating at least one surface of a solid elastomer part using helium ions. According to the invention, multi-energy ions He+ and He2+ are implanted simultaneously, and the ratio RHe, where RHe=HeVHe2+ with He+ et He2+ expressed in atomic percentage, is less than or equal to 100, for example less than 20, resulting in very significant reductions in the frictional properties of parts treated in this way. The He+ and He2+ ions are supplied, for example, by an ECR source.

Abstract translation: 本发明涉及使用氦离子处理固体弹性体部件的至少一个表面的方法。 根据本发明，同时注入多能离子He +和He2 +，其中RHe = HeVHe2 +与He + et He2 +以原子百分比表示的比率RHe小于或等于100，例如小于20，导致 以这种方式处理的部件的摩擦性能非常显着的降低。 He +和He2 +离子例如由ECR源提供。

公开(公告)号：US20090212238A1

公开(公告)日：2009-08-27

申请号：US10587465

申请日：2005-02-02

Applicant: Frederic Guernalec ,  Denis Busardo

Inventor： Frederic Guernalec ,  Denis Busardo

IPC: A61N5/00

CPC classification number: C23C14/48

Abstract: The invention relates to a device for implanting ions in an aluminium alloy part (5), said device comprising an ion source (6) supplying ions accelerated by an extraction voltage, and first means for regulating (7-11) an initial beam (f1′) of ions emitted by said source (6) to form an implantation beam (f1). The source (6) is an electronic cyclotronic resonance source generating the initial beam (f1′) of multi-energy ions that are implanted in the part (5) at a temperature below 120° C. The implantation of said multi-energy ions of the implantation beam (f1) regulated by the regulating means (7-11) is simultaneously carried out at a depth controlled by the extraction voltage of the source.

Abstract translation: 本发明涉及一种用于在铝合金部件（5）中注入离子的装置，所述装置包括提供由提取电压加速的离子的离子源（6）和用于调节（7-11）初始束（f1 '）由所述源（6）发射的离子以形成注入束（f1）。 源（6）是电子回旋共振源，其在低于120℃的温度下产生注入到部分（5）中的多能离子的初始束（f1'）。所述多能离子的注入 由调节装置（7-11）调节的注入束（f1）在由源的提取电压控制的深度的同时进行。