公开(公告)号：US20050224455A1

公开(公告)日：2005-10-13

申请号：US11143295

申请日：2005-06-02

申请人： Patrick Montgomery ,  Cesar Garza ,  William Taylor

发明人： Patrick Montgomery ,  Cesar Garza ,  William Taylor

IPC分类号： H01L21/027 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/78 ,  H01L21/302 ,  B44C1/22

CPC分类号： H01L21/0273 ,  H01L21/0338 ,  H01L21/28123 ,  H01L21/32139 ,  H01L29/66477 ,  H01L29/78 ,  Y10S438/945 ,  Y10S438/947

摘要： Photoresist, which contains hydrogen, is patterned over a semiconductor substrate then treated with either a molecular halogen or a liquid fluorinating agent in order to improve subsequent ion implantation. Hydrogen is replaced, to whatever extent is found desirable, with the halogen. Molecular fluorine (F2) has been found to be particularly effective as the molecular halogen. Molecular fluorine (F2) reacts very efficiently in replacing the hydrogen and further has the benefit of continuing to penetrate into the patterned photoresist so that the entire patterned photoresist layer can have the hydrogen atoms replaced with fluorine atoms if the molecular fluorine flow is continued long enough. The resulting treated photoresist is much more resistant to penetration by implanted ions so that the photoresist can be deposited to a lesser thickness. This is beneficial in shadowing problems such as can occur in halo implants and where the patterned photoresist has a high aspect ratio.

摘要翻译： 含有氢的光致抗蚀剂被图案化在半导体衬底上，然后用分子卤素或液体氟化剂进行处理，以改进随后的离子注入。 用卤素代替任何程度的氢被替代。 已经发现分子氟（F 2 H 2）作为分子卤素是特别有效的。 分子氟（F 2 H 2）在更换氢气时非常有效地反应，并且还具有持续渗透到图案化光致抗蚀剂中的优点，使得整个图案化的光致抗蚀剂层可以使氢原子被氟原子取代，如果 分子氟流持续足够长时间。 所得到的经处理的光致抗蚀剂对注入离子的穿透性更强，使得光致抗蚀剂可以沉积成较小的厚度。 这在阴影问题中是有益的，例如可能发生在晕轮植入物中，并且其中图案化的光致抗蚀剂具有高纵横比。