公开(公告)号：US06469314B1

公开(公告)日：2002-10-22

申请号：US09467941

申请日：1999-12-21

申请人： Patrick N. Grillot ,  Eugene I. Chen ,  Jen-Wu Huang ,  Stephen A. Stockman

发明人： Patrick N. Grillot ,  Eugene I. Chen ,  Jen-Wu Huang ,  Stephen A. Stockman

IPC分类号： H01L3100

CPC分类号： H01L33/305 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/06

摘要： An LED and a method of fabricating the LED which utilize controlled oxygen (O) doping to form at least one layer of the LED having an O dopant concentration which is correlated to the dominant emission wavelength of the LED. The O dopant concentration is regulated to be higher when the LED has been configured to have a longer dominant emission wavelength. Since the dominant emission wavelength is dependent on the composition of the active layer(s) of the LED, the O dopant concentration in the layer is related to the composition of the active layer(s). The controlled O doping improves the reliability while minimizing any light output penalty due to the introduction of O dopants. In an exemplary embodiment, the LED is an AlGaInP LED that includes a substrate, an optional distributed Bragg reflector layer, an n-type confining layer, an optional n-type set-back layer, an active region, an optional p-type set-back layer, a p-type confining layer and an optional window layer. In a preferred embodiment, the active region includes a multiplicity of active layers, where each active layer is 125 Angstroms thick or less and the active layers are separated from each other by barrier layers whose composition is Al0.5In0.5P and whose thickness is 100 Angstroms or less. In a preferred embodiment, both the p-type confining layer and the p-type set-back layer are doped with a controlled amount of O, depending on the dominant emission wavelength of the LED. In addition to the O doping, the p-type confining layer of the LED is preferably doped with a high amount of p-type dopants, such as Mg, Zn, C or Be. During high temperature thermal processing, this high concentration of p-type dopants then partially diffuses into the active region, resulting in a heavily p-type doped active region.

摘要翻译： LED和制造LED的方法，其利用受控氧（O）掺杂来形成具有与LED的主发射波长相关的O掺杂剂浓度的至少一层LED。 当LED被配置为具有更长的主发射波长时，O掺杂剂浓度被调节为更高。 由于主发射波长取决于LED的有源层的组成，所以该层中的O掺杂剂浓度与有源层的组成有关。 受控O掺杂提高了可靠性，同时最小化由于引入O掺杂剂导致的任何光输出损失。 在示例性实施例中，LED是AlGaInP LED，其包括衬底，可选的分布式布拉格反射器层，n型约束层，可选的n型反射层，有源区，可选的p型集合 背面层，p型约束层和可选窗口层。 在优选实施例中，有源区包括多个有源层，其中每个有源层的厚度为125埃或更小，并且有源层通过其组成为Al 0.5 In 0.5 P并且其厚度为100的势垒层彼此分离 埃或以下。 在优选实施例中，取决于LED的主要发射波长，p型限制层和p型封装层都掺杂有受控量的O。 除了O掺杂之外，LED的p型限制层优选掺杂有大量的p型掺杂剂，例如Mg，Zn，C或Be。 在高温热处理期间，这种高浓度的p型掺杂剂然后部分地扩散到有源区，导致大量p型掺杂的有源区。