Self-bootstrapping word-line driver circuit and method
    1.
    发明授权
    Self-bootstrapping word-line driver circuit and method 失效
    自引导字线驱动电路及方法

    公开(公告)号:US6025751A

    公开(公告)日:2000-02-15

    申请号:US947754

    申请日:1997-10-08

    IPC分类号: G11C8/08 G11C11/408 H03M7/162

    CPC分类号: G11C11/4085 G11C8/08

    摘要: Aspects for self bootstrapping word-line driver circuitry are provided. In a circuit aspect, a word-line driver circuit for a memory cell in a semiconductor memory includes a signal input means, the signal input means comprising a first plurality of transistors, the first plurality of transistors receiving an input voltage signal higher than a voltage supply signal of the semiconductor memory. The circuit further includes a signal output means, the signal output means comprising a second plurality of transistors coupled to the first plurality of transistors and providing an output drive signal sufficient for the memory cell.In a method aspect, a method for providing proper voltage level output of a word-line driver circuit for a semiconductor memory includes forming a self-bootstrap circuit as the word-line driver circuit and providing an input voltage signal to the self-bootstrap circuit, the input voltage signal acting as a source voltage for the circuit and being higher by a predetermined value than a supply voltage of the semiconductor memory.

    摘要翻译: 提供自引导字线驱动电路的方面。 在电路方面,半导体存储器中用于存储单元的字线驱动电路包括信号输入装置,信号输入装置包括第一多个晶体管,第一多个晶体管接收高于电压的输入电压信号 半导体存储器的供给信号。 电路还包括信号输出装置,信号输出装置包括耦合到第一多个晶体管的第二多个晶体管,并提供足以存储存储单元的输出驱动信号。 在方法方面,用于为半导体存储器提供字线驱动电路的适当电压电平输出的方法包括形成自引导电路作为字线驱动电路,并向自引导电路提供输入电压信号 所述输入电压信号用作所述电路的源电压并且比所述半导体存储器的电源电压高预定值。