Method of fabricating a multijunction solar cell with a bypass diode having an intrisis layer
    1.
    发明申请
    Method of fabricating a multijunction solar cell with a bypass diode having an intrisis layer 有权
    制造具有内层的旁路二极管的多结太阳能电池的方法

    公开(公告)号:US20060042684A1

    公开(公告)日:2006-03-02

    申请号:US11058595

    申请日:2005-05-06

    IPC分类号: H01L25/00

    摘要: A solar cell having a multijunction solar cell structure with a bypass diode is disclosed. The bypass diode provides a reverse bias protection for the multijunction solar cell structure. In one embodiment, the multijunction solar cell structure includes a substrate, a bottom cell, a middle cell, a top cell, a bypass diode, a lateral conduction layer, and a shunt. The lateral conduction layer is deposited over the top cell. The bypass diode is deposited over the lateral conduction layer. One side of the shunt is connected to the substrate and another side of the shunt is connected to the lateral conduction layer. In another embodiment, the bypass diode contains an i-layer to enhance the diode performance.

    摘要翻译: 公开了具有带旁路二极管的多结太阳能电池结构的太阳能电池。 旁路二极管为多结太阳能电池结构提供反向偏置保护。 在一个实施例中,多结太阳能电池结构包括衬底,底部电池,中间电池,顶部电池,旁路二极管,横向导电层和分流器。 横向导电层沉积在顶部电池上。 旁路二极管沉积在横向导电层上。 分流器的一侧连接到基板,并且分流器的另一侧连接到横向导电层。 在另一个实施例中,旁路二极管包含i层以增强二极管性能。

    Dual Junction InGaP/GaAs Solar Cell
    2.
    发明申请
    Dual Junction InGaP/GaAs Solar Cell 审中-公开
    双结InGaP / GaAs太阳能电池

    公开(公告)号:US20100089440A1

    公开(公告)日:2010-04-15

    申请号:US12248654

    申请日:2008-10-09

    IPC分类号: H01L31/0264

    摘要: The present application is directed to a multi-terminal semiconductor solar cell. The solar cell may be dual junction solar cells comprising single junctions independently interconnected by a middle lateral conduction layer (MLCL). The solar cells may include a GaAs subcell, a GaInP subcell, and a MLCL disposed therebetween. In addition, the solar cells may include a plurality of terminals. One terminal may be operatively connected to the GaAs subcell, a second terminal may be operatively connected to the GaInP subcell and a third terminal may be operatively connected to the MLCL.

    摘要翻译: 本申请涉及一种多端子半导体太阳能电池。 太阳能电池可以是包括通过中间横向导电层(MLCL)独立互连的单个结的双结太阳能电池。 太阳能电池可以包括GaAs子电池,GaInP子电池和设置在它们之间的MLCL。 此外,太阳能电池可以包括多个端子。 一个端子可以可操作地连接到GaAs子电池,第二端子可以可操作地连接到GaInP子电池,并且第三端子可以可操作地连接到MLCL。

    SOLAR CELL WITH DIAMOND LIKE CARBON COVER GLASS
    3.
    发明申请
    SOLAR CELL WITH DIAMOND LIKE CARBON COVER GLASS 审中-公开
    太阳能电池与金刚石类碳玻璃

    公开(公告)号:US20080264476A1

    公开(公告)日:2008-10-30

    申请号:US11741387

    申请日:2007-04-27

    IPC分类号: H01L31/00

    摘要: A solar cell including a semiconductor body including at least one photoactive junction; and a diamond like carbon layer deposited over the top surface of the semiconductor body.

    摘要翻译: 一种包括半导体本体的太阳能电池,包括至少一个光活性连接点; 以及沉积在半导体本体的顶表面上的类金刚石碳层。

    Solar cell with feedthrough via
    4.
    发明申请
    Solar cell with feedthrough via 审中-公开
    带通电孔的太阳能电池

    公开(公告)号:US20060231130A1

    公开(公告)日:2006-10-19

    申请号:US11109016

    申请日:2005-04-19

    IPC分类号: H02N6/00

    CPC分类号: H01L31/022433 Y02E10/50

    摘要: A semiconductor structure that includes a first semiconductor region forming a first surface of the semiconductor structure and having a first polarity and a second semiconductor region forming a second surface of the semiconductor structure and having a second polarity. The structure further includes at least one insulating via formed in the semiconductor structure from said first surface to said second surface, an electrical connection extending through said via and an insulated contact pad on the first surface of the semiconductor structure, said electrical connection extending from said second semiconductor region to said insulated contact pad so as to form a terminal of said second semiconductor region on the first surface.

    摘要翻译: 一种半导体结构,其包括形成半导体结构的第一表面并具有第一极性的第一半导体区域和形成半导体结构的第二表面并具有第二极性的第二半导体区域。 所述结构还包括至少一个形成在所述半导体结构中的绝缘通孔,从所述第一表面到所述第二表面,延伸穿过所述通孔的电连接和所述半导体结构的第一表面上的绝缘接触焊盘,所述电连接从所述 第二半导体区域延伸到所述绝缘接触焊盘,以在第一表面上形成所述第二半导体区域的端子。

    Method of forming multijuction solar cell structure with high band gap heterojunction middle cell
    5.
    发明申请
    Method of forming multijuction solar cell structure with high band gap heterojunction middle cell 有权
    用高带隙异质结中间电池形成多功能太阳能电池结构的方法

    公开(公告)号:US20060185725A1

    公开(公告)日:2006-08-24

    申请号:US11401720

    申请日:2006-04-10

    IPC分类号: H01L31/00

    摘要: A method and a multijunction solar device having a high band gap heterojunction middle solar cell are disclosed. In one embodiment, a triple-junction solar device includes bottom, middle, and top cells. The bottom cell has a germanium (Ge) substrate and a buffer layer, wherein the buffer layer is disposed over the Ge substrate. The middle cell contains a heterojunction structure, which further includes an emitter layer and a base layer that are disposed over the bottom cell. The top cell contains an emitter layer and a base layer disposed over the middle cell.

    摘要翻译: 公开了一种具有高带隙异质结中间太阳能电池的方法和多结太阳能装置。 在一个实施例中,三结太阳能装置包括底部,中部和顶部单元。 底部单元具有锗(Ge)衬底和缓冲层,其中缓冲层设置在Ge衬底上。 中间单元包含异质结结构,其还包括布置在底部单元上方的发射极层和基极层。 顶部单元包含放置在中间单元上方的发射极层和基极层。

    Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
    6.
    发明申请
    Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell 有权
    具有高带隙异质结中间电池的多结太阳能电池结构的方法和装置

    公开(公告)号:US20050199281A1

    公开(公告)日:2005-09-15

    申请号:US11114454

    申请日:2005-04-26

    摘要: A method and a multijunction solar device having a high band gap heterojunction middle solar cell are disclosed. In one embodiment, a triple-junction solar device includes bottom, middle, and top cells. The bottom cell has a germanium (Ge) substrate and a buffer layer, wherein the buffer layer is disposed over the Ge substrate. The middle cell contains a heterojunction structure, which further includes an emitter layer and a base layer that are disposed over the bottom cell. The top cell contains an emitter layer and a base layer disposed over the middle cell.

    摘要翻译: 公开了一种具有高带隙异质结中间太阳能电池的方法和多结太阳能装置。 在一个实施例中,三结太阳能装置包括底部,中部和顶部单元。 底部单元具有锗(Ge)衬底和缓冲层,其中缓冲层设置在Ge衬底上。 中间单元包含异质结结构,其还包括布置在底部单元上方的发射极层和基极层。 顶部单元包含放置在中间单元上方的发射极层和基极层。

    SOLAR CELL MODULE ON FLEXIBLE SUPPORTING FILM

    公开(公告)号:US20220328711A1

    公开(公告)日:2022-10-13

    申请号:US17742891

    申请日:2022-05-12

    摘要: A solar cell module comprising a plurality of solar cells mounted on a flexible support, the support comprising a conductive layer on the top surface thereof divided into two electrically isolated portions—a first conductive portion and a second conductive portion. Each solar cell comprises a front surface, a rear surface, and a first contact on the rear surface and a second contact on the front surface. Each one of the plurality of solar cells is placed on the first conductive portion with the first contact electrically connected to the first conductive portion so that the solar cells are connected through the first conductive portion. A second contact of each solar cell is then connected to the second conductive portion by a respective interconnect.

    Solar cell mechanical interconnection using direct wafer bonding
    8.
    发明申请
    Solar cell mechanical interconnection using direct wafer bonding 审中-公开
    使用直接晶圆接合的太阳能电池机械互连

    公开(公告)号:US20050161078A1

    公开(公告)日:2005-07-28

    申请号:US10765532

    申请日:2004-01-27

    申请人: Daniel Aiken

    发明人: Daniel Aiken

    IPC分类号: H01L25/04 H01L31/00

    CPC分类号: H01L31/043 Y02E10/50

    摘要: A multi-junction solar cell includes a plurality of monolithic cells joined together by direct wafer bonds. Each monolithic cell has at least one junction. The direct wafer bonds include no intervening material between joined monolithic cells. The direct wafer bonds are achieved by bonding forces between dipoles at the surfaces of adjoining monolithic cells.

    摘要翻译: 多结太阳能电池包括通过直接晶片接合连接在一起的多个单片电池。 每个整体单元具有至少一个结。 直接晶片接合在连接的单片电池之间不包括介入材料。 直接晶片接合是通过邻接单片电池表面的偶极之间的结合力实现的。