Dual Junction InGaP/GaAs Solar Cell
    1.
    发明申请
    Dual Junction InGaP/GaAs Solar Cell 审中-公开
    双结InGaP / GaAs太阳能电池

    公开(公告)号:US20100089440A1

    公开(公告)日:2010-04-15

    申请号:US12248654

    申请日:2008-10-09

    IPC分类号: H01L31/0264

    摘要: The present application is directed to a multi-terminal semiconductor solar cell. The solar cell may be dual junction solar cells comprising single junctions independently interconnected by a middle lateral conduction layer (MLCL). The solar cells may include a GaAs subcell, a GaInP subcell, and a MLCL disposed therebetween. In addition, the solar cells may include a plurality of terminals. One terminal may be operatively connected to the GaAs subcell, a second terminal may be operatively connected to the GaInP subcell and a third terminal may be operatively connected to the MLCL.

    摘要翻译: 本申请涉及一种多端子半导体太阳能电池。 太阳能电池可以是包括通过中间横向导电层(MLCL)独立互连的单个结的双结太阳能电池。 太阳能电池可以包括GaAs子电池,GaInP子电池和设置在它们之间的MLCL。 此外,太阳能电池可以包括多个端子。 一个端子可以可操作地连接到GaAs子电池,第二端子可以可操作地连接到GaInP子电池,并且第三端子可以可操作地连接到MLCL。

    SOLAR CELL WITH DIAMOND LIKE CARBON COVER GLASS
    2.
    发明申请
    SOLAR CELL WITH DIAMOND LIKE CARBON COVER GLASS 审中-公开
    太阳能电池与金刚石类碳玻璃

    公开(公告)号:US20080264476A1

    公开(公告)日:2008-10-30

    申请号:US11741387

    申请日:2007-04-27

    IPC分类号: H01L31/00

    摘要: A solar cell including a semiconductor body including at least one photoactive junction; and a diamond like carbon layer deposited over the top surface of the semiconductor body.

    摘要翻译: 一种包括半导体本体的太阳能电池,包括至少一个光活性连接点; 以及沉积在半导体本体的顶表面上的类金刚石碳层。

    Solar cell with feedthrough via
    3.
    发明申请
    Solar cell with feedthrough via 审中-公开
    带通电孔的太阳能电池

    公开(公告)号:US20060231130A1

    公开(公告)日:2006-10-19

    申请号:US11109016

    申请日:2005-04-19

    IPC分类号: H02N6/00

    CPC分类号: H01L31/022433 Y02E10/50

    摘要: A semiconductor structure that includes a first semiconductor region forming a first surface of the semiconductor structure and having a first polarity and a second semiconductor region forming a second surface of the semiconductor structure and having a second polarity. The structure further includes at least one insulating via formed in the semiconductor structure from said first surface to said second surface, an electrical connection extending through said via and an insulated contact pad on the first surface of the semiconductor structure, said electrical connection extending from said second semiconductor region to said insulated contact pad so as to form a terminal of said second semiconductor region on the first surface.

    摘要翻译: 一种半导体结构,其包括形成半导体结构的第一表面并具有第一极性的第一半导体区域和形成半导体结构的第二表面并具有第二极性的第二半导体区域。 所述结构还包括至少一个形成在所述半导体结构中的绝缘通孔,从所述第一表面到所述第二表面,延伸穿过所述通孔的电连接和所述半导体结构的第一表面上的绝缘接触焊盘,所述电连接从所述 第二半导体区域延伸到所述绝缘接触焊盘,以在第一表面上形成所述第二半导体区域的端子。

    Method of fabricating a multijunction solar cell with a bypass diode having an intrisis layer
    4.
    发明申请
    Method of fabricating a multijunction solar cell with a bypass diode having an intrisis layer 有权
    制造具有内层的旁路二极管的多结太阳能电池的方法

    公开(公告)号:US20060042684A1

    公开(公告)日:2006-03-02

    申请号:US11058595

    申请日:2005-05-06

    IPC分类号: H01L25/00

    摘要: A solar cell having a multijunction solar cell structure with a bypass diode is disclosed. The bypass diode provides a reverse bias protection for the multijunction solar cell structure. In one embodiment, the multijunction solar cell structure includes a substrate, a bottom cell, a middle cell, a top cell, a bypass diode, a lateral conduction layer, and a shunt. The lateral conduction layer is deposited over the top cell. The bypass diode is deposited over the lateral conduction layer. One side of the shunt is connected to the substrate and another side of the shunt is connected to the lateral conduction layer. In another embodiment, the bypass diode contains an i-layer to enhance the diode performance.

    摘要翻译: 公开了具有带旁路二极管的多结太阳能电池结构的太阳能电池。 旁路二极管为多结太阳能电池结构提供反向偏置保护。 在一个实施例中,多结太阳能电池结构包括衬底,底部电池,中间电池,顶部电池,旁路二极管,横向导电层和分流器。 横向导电层沉积在顶部电池上。 旁路二极管沉积在横向导电层上。 分流器的一侧连接到基板,并且分流器的另一侧连接到横向导电层。 在另一个实施例中,旁路二极管包含i层以增强二极管性能。

    Four junction inverted metamorphic multijunction solar cell with a single metamorphic layer
    5.
    发明授权
    Four junction inverted metamorphic multijunction solar cell with a single metamorphic layer 有权
    具有单变质层的四结倒置变质多结太阳能电池

    公开(公告)号:US08969712B2

    公开(公告)日:2015-03-03

    申请号:US13463069

    申请日:2012-05-03

    摘要: A multijunction solar cell including an upper first solar subcell having a first band gap; a second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap; a graded interlayer adjacent to the second solar subcell, the graded interlayer having a third band gap greater than the second band gap; and a third solar subcell adjacent to the graded interlayer, the third subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A lower fourth solar subcell is provided adjacent to the third subcell and lattice matched thereto, the lower fourth subcell having a fifth band gap smaller than the fourth band gap.

    摘要翻译: 一种多结太阳能电池,包括具有第一带隙的上部第一太阳能子电池; 与第一太阳能子电池相邻并且具有小于第一带隙的第二带隙的第二太阳能子电池; 梯度夹层与第二太阳能子电池相邻,梯度夹层具有大于第二带隙的第三带隙; 以及与所述渐变中间层相邻的第三太阳能子电池,所述第三子电池具有小于所述第二带隙的第四带隙,使得所述第三子电池相对于所述第二子电池晶格失配。 第四太阳能子电池被设置为与第三子电池相邻并且与其匹配,下部第四子电池具有小于第四带隙的第五带隙。

    FOUR JUNCTION INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL WITH A SINGLE METAMORPHIC LAYER
    6.
    发明申请
    FOUR JUNCTION INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL WITH A SINGLE METAMORPHIC LAYER 有权
    具有单个元素层的四连体反相元多谐振太阳能电池

    公开(公告)号:US20120211071A1

    公开(公告)日:2012-08-23

    申请号:US13463069

    申请日:2012-05-03

    IPC分类号: H01L31/0725 H01L31/18

    摘要: A multijunction solar cell including an upper first solar subcell having a first band gap; a second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap; a graded interlayer adjacent to the second solar subcell, the first graded interlayer having a third band gap greater than the second band gap; and a third solar subcell adjacent to the graded interlayer, the third subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A lower fourth solar subcell is provided adjacent to the third subcell and lattice matched thereto, the lower fourth subcell having a fifth band gap smaller than the fourth band gap.

    摘要翻译: 一种多结太阳能电池,包括具有第一带隙的上部第一太阳能子电池; 与所述第一太阳能子电池相邻并且具有小于所述第一带隙的第二带隙的第二太阳能子电池; 邻近所述第二太阳能子电池的梯度中间层,所述第一渐变中间层具有大于所述第二带隙的第三带隙; 以及与所述渐变中间层相邻的第三太阳能子电池,所述第三子电池具有小于所述第二带隙的第四带隙,使得所述第三子电池相对于所述第二子电池晶格失配。 第四太阳能子电池被设置为与第三子电池相邻并且与其匹配,下部第四子电池具有小于第四带隙的第五带隙。

    Via structures in solar cells with bypass diode
    9.
    发明申请
    Via structures in solar cells with bypass diode 有权
    具有旁路二极管的太阳能电池的通孔结构

    公开(公告)号:US20070107772A1

    公开(公告)日:2007-05-17

    申请号:US11280379

    申请日:2005-11-16

    IPC分类号: H01L31/00

    摘要: A solar cell including a semiconductor body with a multijunction solar cell and an integral bypass diode, and a pair of vias extending between the upper and lower surfaces, forming determined on the lower surface and electrically coupling the anode of the bypass diode with the conductive grid on the upper surface.

    摘要翻译: 一种太阳能电池,其包括具有多结太阳能电池的半导体主体和一体式旁路二极管,以及在上表面和下表面之间延伸的一对通孔,其形成在下表面上并且将旁路二极管的阳极与导电栅极电耦合 在上表面。