公开(公告)号：US09709832B2

公开(公告)日：2017-07-18

申请号：US15006762

申请日：2016-01-26

申请人： Pengdi Han

发明人： Pengdi Han ,  Welling Yan

IPC分类号： G02F1/05 ,  G02F1/055 ,  G02F1/355 ,  G02F1/00 ,  B29D11/00 ,  G02F1/01 ,  G02F1/21

CPC分类号： G02F1/055 ,  B29D11/00932 ,  G02F1/0027 ,  G02F1/0136 ,  G02F1/05 ,  G02F1/21 ,  G02F1/3558 ,  G02F2001/212

摘要： The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof. More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient γc, e.g., transverse effective linear E-O coefficient γTc more than 1100 pm/V and longitudinal effective linear E-O coefficient γlc up to 527 pm/V, which results in a very low half-wavelength voltage Vlπ below 200V and VTπ below about 87V in a wide number of modulation, communication, laser, and industrial uses.

公开(公告)号：US20150177536A1

公开(公告)日：2015-06-25

申请号：US14390522

申请日：2013-04-04

申请人： PENGDI HAN

发明人： Pengdi Han ,  Welling Yan

IPC分类号： G02F1/05 ,  G02F1/21 ,  B29D11/00 ,  G02F1/01

CPC分类号： G02F1/055 ,  B29D11/00932 ,  G02F1/0027 ,  G02F1/0136 ,  G02F1/05 ,  G02F1/21 ,  G02F1/3558 ,  G02F2001/212

摘要： The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof. More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient yc, e.g., transverse effective linear E-O coefficient yTc more than 1100 pm/V and longitudinal effective linear E-O coefficient ylc up to 527 pm/V, which results in a very low half-wavelength voltage Vtx below 200V and Vtx below about 87V in a wide number of modulation, communication, laser, and industrial uses.

摘要翻译： 本发明涉及电光（E-O）晶体元件，其应用及其制备方法。 更具体地，本发明涉及显示超高线性EO系数yc的EO晶体元件（其可以由掺杂或未掺杂的PMN-PT，PIN-PMN-PT或PZN-PT铁电晶体制成），例如， 横向有效线性EO系数yTc大于1100pm / V，纵向有效线性EO系数ylc高达527pm / V，这导致非常低的半波长电压Vtx低于200V，Vtx低于约87V，在大量的调制 通信，激光和工业用途。

公开(公告)号：US09280006B2

公开(公告)日：2016-03-08

申请号：US14390522

申请日：2013-04-04

申请人： PENGDI HAN

发明人： Pengdi Han ,  Welling Yan

IPC分类号： G02F1/05 ,  G02F1/355 ,  G02F1/00 ,  B29D11/00 ,  G02F1/01 ,  G02F1/21

CPC分类号： G02F1/055 ,  B29D11/00932 ,  G02F1/0027 ,  G02F1/0136 ,  G02F1/05 ,  G02F1/21 ,  G02F1/3558 ,  G02F2001/212

摘要： The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof. More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient yc, e.g., transverse effective linear E-O coefficient yTc more than 1100 pm/V and longitudinal effective linear E-O coefficient ytc up to 527 pm/V, which results in a very low half-wavelength voltage Vtx below 200V and Vtx below about 87V in a wide number of modulation, communication, laser, and industrial uses.

摘要翻译： 本发明涉及电光（E-O）晶体元件，其应用及其制备方法。 更具体地，本发明涉及显示超高线性EO系数yc的EO晶体元件（其可以由掺杂或未掺杂的PMN-PT，PIN-PMN-PT或PZN-PT铁电晶体制成），例如， 横向有效线性EO系数yTc大于1100 pm / V，纵向有效线性EO系数ytc高达527 pm / V，这导致非常低的半波长电压Vtx低于200V，Vtx低于约87V，在广泛的调制 通信，激光和工业用途。