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    Interface for communication between voltage domains
    1.
    发明授权
    Interface for communication between voltage domains 有权
    电压域之间的通信接口

    公开(公告)号：US08818265B2

    公开(公告)日：2014-08-26

    申请号：US13454815

    申请日：2012-04-24

    申请人： Peter Gerard Steeneken ,  Maarten Jacobus Swanenberg ,  Henk Boezen ,  Gerhard Koops ,  Frans Bontekoe ,  Reinout Woltjer

    发明人： Peter Gerard Steeneken ,  Maarten Jacobus Swanenberg ,  Henk Boezen ,  Gerhard Koops ,  Frans Bontekoe ,  Reinout Woltjer

    IPC分类号： H04B5/00 ,  H01L21/70 ,  H01L29/00 ,  H01L21/02 ,  H03K17/00 ,  H04B1/44

    CPC分类号： H04B1/44 ,  H03K17/00

    摘要： One or more embodiments provide circuitry for isolation and communication of signals between circuits operating in different voltage domains using capacitive coupling. The embodiments utilize capacitive structures having increased breakdown voltage in comparison to previous parallel plate implementations. The capacitive isolation is provided by parallel plate capacitive structures, each implemented to have parallel plates of different horizontal sizes. Due to the difference in horizontal size, edges of the parallel plates, where electric fields are the strongest, are laterally offset from the region where the parallel plates overlap. As a result, breakdown voltage between the parallel plates is increased.

    摘要翻译： 一个或多个实施例提供用于使用电容耦合在不同电压域中工作的电路之间的信号的隔离和通信的电路。 与先前的平行板实现相比，这些实施例利用具有增加的击穿电压的电容结构。 电容隔离由平行板电容结构提供，每个电容结构被实现为具有不同水平尺寸的平行板。 由于水平尺寸的差异，电场最强的平行板的边缘与平行板重叠的区域横向偏移。 结果，平行板之间的击穿电压增加。

    INTERFACE FOR COMMUNICATION BETWEEN VOLTAGE DOMAINS
    2.
    发明申请
    INTERFACE FOR COMMUNICATION BETWEEN VOLTAGE DOMAINS 有权
    电压域之间的通信接口

    公开(公告)号：US20130281033A1

    公开(公告)日：2013-10-24

    申请号：US13454815

    申请日：2012-04-24

    申请人： Peter Gerard Steeneken ,  Maarten Jacobus Swanenberg ,  Henk Boezen ,  Gerhard Koops ,  Frans Bontekoe ,  Reinout Woltjer

    发明人： Peter Gerard Steeneken ,  Maarten Jacobus Swanenberg ,  Henk Boezen ,  Gerhard Koops ,  Frans Bontekoe ,  Reinout Woltjer

    IPC分类号： H04B1/44

    CPC分类号： H04B1/44 ,  H03K17/00

    摘要： One or more embodiments provide circuitry for isolation and communication of signals between circuits operating in different voltage domains using capacitive coupling. The embodiments utilize capacitive structures having increased breakdown voltage in comparison to previous parallel plate implementations. The capacitive isolation is provided by parallel plate capacitive structures, each implemented to have parallel plates of different horizontal sizes. Due to the difference in horizontal size, edges of the parallel plates, where electric fields are the strongest, are laterally offset from the region where the parallel plates overlap. As a result, breakdown voltage between the parallel plates is increased.

    摘要翻译： 一个或多个实施例提供用于使用电容耦合在不同电压域中工作的电路之间的信号的隔离和通信的电路。 与先前的平行板实现相比，这些实施例利用具有增加的击穿电压的电容结构。 电容隔离由平行板电容结构提供，每个电容结构被实现为具有不同水平尺寸的平行板。 由于水平尺寸的差异，电场最强的平行板的边缘与平行板重叠的区域横向偏移。 结果，平行板之间的击穿电压增加。

    Semiconductor device provided with a number of programmable elements
    5.
    发明授权
    Semiconductor device provided with a number of programmable elements 失效
    具有多个可编程元件的半导体器件

    公开(公告)号：US5416343A

    公开(公告)日：1995-05-16

    申请号：US306854

    申请日：1994-09-15

    申请人： Jan W. Slotboom ,  Pierre H. Woerlee ,  Reinout Woltjer

    发明人： Jan W. Slotboom ,  Pierre H. Woerlee ,  Reinout Woltjer

    IPC分类号： G11C17/16 ,  H01L23/525 ,  H01L27/10 ,  G11C17/00 ,  H01L27/04

    CPC分类号： G11C17/16 ,  H01L23/5252 ,  H01L2924/0002 ,  Y10S257/91

    摘要： A semiconductor device includes a number of programmable elements arranged in a matrix of rows and columns. The elements each have a doped semiconductor region (10) and a conductor region (20) which are mutually separated by an insulating layer (8). The conductor region (20) can be a material suitable for forming a rectifying junction (35) with the material of the semiconductor region (10). Within a row, the conductor regions of the programmable elements present therein are coupled to a common row conductor (21 . . . 23), and within a column the semiconductor regions of the programmable elements situated therein are connected to a common column conductor (11 . . . 14). To program an element, a programming voltage V.sub.PROG can be applied between the column and row conductors associated with the element to be programmed during operation, which voltage is greater than the breakdown voltage of at least a portion of the insulating layer (8) situated between the semiconductor region (10) and the conductor region (20) of the element. The programming voltage is applied with such a polarity that majority charge carriers in the semiconductor region (10) are drawn to an interface (4) between the semiconductor region (10) and the insulating layer (8), forming an accumulation layer (31) there. Between the remaining column and row conductors, on the other hand, the programming voltage is offered with an opposite polarity. Thus the programming of the matrix can take place, if so desired, by means of only a single voltage level V.sub.PROG.

    摘要翻译： 半导体器件包括以行和列的矩阵排列的多个可编程元件。 这些元件各自具有由绝缘层（8）相互分离的掺杂半导体区域（10）和导体区域（20）。 导体区域（20）可以是适于与半导体区域（10）的材料形成整流结（35）的材料。 在一行内，其中存在的可编程元件的导体区域耦合到公共行导体（21 ... 23），并且在列内，位于其中的可编程元件的半导体区域连接到公共列导体（11 ... 14）。 为了对元件进行编程，编程电压VPROG可以施加在与要在操作期间被编程的元件相关联的列和行导体之间，该电压大于位于第二绝缘层（8）的至少一部分的击穿电压 半导体区域（10）和元件的导体区域（20）。 施加编程电压，使得半导体区域（10）中的多数电荷载流子被吸引到半导体区域（10）和绝缘层（8）之间的界面（4）上，形成蓄积层（31） 那里。 另一方面，在剩余的列和导体之间，以相反的极性提供编程电压。 因此，如果需要，可以仅通过单个电压电平VPROG来进行矩阵的编程。

    Semiconductor device provided having a programmable element with a high-conductivity buried contact region
    7.
    发明授权
    Semiconductor device provided having a programmable element with a high-conductivity buried contact region 失效
    提供具有可编程元件的半导体器件具有高导电性掩埋接触区域

    公开(公告)号：US5502326A

    公开(公告)日：1996-03-26

    申请号：US381002

    申请日：1995-01-25

    申请人： Jan W. Slotboom ,  Pierre H. Woerlee ,  Reinout Woltjer

    发明人： Jan W. Slotboom ,  Pierre H. Woerlee ,  Reinout Woltjer

    IPC分类号： H01L27/10 ,  G11C17/16 ,  H01L21/8246 ,  H01L23/525 ,  H01L27/102 ,  H01L27/112 ,  H01L29/00 ,  H01L27/095

    CPC分类号： G11C17/16 ,  H01L23/5252 ,  H01L2924/0002 ,  Y10S257/91

    摘要： A semiconductor device includes a programmable element having a doped semiconductor region (4) and a conductor region (6) which are separated from one another by at least a portion of an insulating layer (5). The conductor region (6) is of a material suitable for forming a rectifying junction (8) with the material of the semiconductor region (4). To achieve a comparatively high conductivity connection to the semiconductor region (4), the element is further provided with a contact region (3) which has a comparatively low electrical resistance compared with the semiconductor region (4). The contact region (3) is provided at a side of the semiconductor region (4) remote from the insulating layer (5) and is separated from the insulating layer (5) by the semiconductor region (4). Both the semiconductor region (4) and the contact region (5) are laterally bounded by an isolating region (7) at opposing sides. The invention thus offers a device provided with a programmable element of a substantially more compact structure than a comparable conventional programmable element.

    摘要翻译： 半导体器件包括具有掺杂半导体区域（4）的可编程元件和通过绝缘层（5）的至少一部分彼此分离的导体区域（6）。 导体区域（6）是适于与半导体区域（4）的材料形成整流结（8）的材料。 为了实现与半导体区域（4）的较高的导电性连接，元件还具有与半导体区域（4）相比具有相对低的电阻的接触区域（3）。 接触区域（3）设置在远离绝缘层（5）的半导体区域（4）的一侧，并且通过半导体区域（4）与绝缘层（5）分离。 半导体区域（4）和接触区域（5）都由相对侧的隔离区域（7）横向界定。 因此，本发明提供了一种具有比可比较的常规可编程元件基本上更紧凑结构的可编程元件的装置。