公开(公告)号：US07880298B2

公开(公告)日：2011-02-01

申请号：US11950819

申请日：2007-12-05

申请人： Peter J. Drake ,  Chad E. Boyack ,  Kevin Andrew Paulson ,  James E. Faoro ,  Cynthia Robin Nelson Konen ,  Steven N. Peterson ,  George R. Cunnington ,  James R. Myers ,  Isis Roche-Rios

发明人： Peter J. Drake ,  Chad E. Boyack ,  Kevin Andrew Paulson ,  James E. Faoro ,  Cynthia Robin Nelson Konen ,  Steven N. Peterson ,  George R. Cunnington ,  James R. Myers ,  Isis Roche-Rios

IPC分类号： H01L23/10 ,  H01L23/34

CPC分类号： H01L23/3735 ,  H01L23/3733 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/83385 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/19105 ,  H01L2924/00

摘要： A semiconductor device thermal connection used to remove heat from a semiconductor device, such as an integrated circuit, includes a metallic barrier layer on the semiconductor device, and a high thermal conductivity material on the metallic barrier layer that joins the semiconductor device to a thermal heat spreader. The metallic barrier layer may be one or more sputtered layers, and the high thermal conductivity material may be a metallic material, for instance including indium, that is soldered onto the sputtered material. The high thermal conductivity material may form a primary thermal connection in conducting heat away from the semiconductor device. A secondary thermal connection may be made between the heat spreader and a heat sink. The secondary thermal connection may include a compressible solid carbon fiber material. A diaphragm may be used to contain the carbon fiber material, to prevent carbon fibers from coming into contact with the semiconductor device.

摘要翻译： 用于从诸如集成电路的半导体器件去除热量的半导体器件热连接包括半导体器件上的金属阻挡层和金属阻挡层上的高导热性材料，其将半导体器件连接到热能 吊具 金属阻挡层可以是一个或多个溅射层，并且高导热性材料可以是焊接到溅射材料上的金属材料，例如包括铟。 高导热性材料可以在远离半导体器件传导热量的同时形成初级热连接。 可以在散热器和散热器之间形成二次热连接。 二次热连接可以包括可压缩的固体碳纤维材料。 可以使用隔膜来容纳碳纤维材料，以防止碳纤维与半导体器件接触。

公开(公告)号：US20090146292A1

公开(公告)日：2009-06-11

申请号：US11950819

申请日：2007-12-05

申请人： Peter J. Drake ,  Chad E. Boyack ,  Kevin Andrew Paulson ,  James E. Faoro ,  Cynthia Robin Nelson Konen ,  Steven N. Peterson ,  George R. Cunnington ,  James R. Myers ,  Isis Roche-Rios

发明人： Peter J. Drake ,  Chad E. Boyack ,  Kevin Andrew Paulson ,  James E. Faoro ,  Cynthia Robin Nelson Konen ,  Steven N. Peterson ,  George R. Cunnington ,  James R. Myers ,  Isis Roche-Rios

IPC分类号： H01L23/373 ,  H01L21/02

CPC分类号： H01L23/3735 ,  H01L23/3733 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/83385 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/19105 ,  H01L2924/00

摘要： A semiconductor device thermal connection used to remove heat from a semiconductor device, such as an integrated circuit, includes a metallic barrier layer on the semiconductor device, and a high thermal conductivity material on the metallic barrier layer that joins the semiconductor device to a thermal heat spreader. The metallic barrier layer may be one or more sputtered layers, and the high thermal conductivity material may be a metallic material, for instance including indium, that is soldered onto the sputtered material. The high thermal conductivity material may form a primary thermal connection in conducting heat away from the semiconductor device. A secondary thermal connection may be made between the heat spreader and a heat sink. The secondary thermal connection may include a compressible solid carbon fiber material. A diaphragm may be used to contain the carbon fiber material, to prevent carbon fibers from coming into contact with the semiconductor device.

摘要翻译： 用于从诸如集成电路的半导体器件去除热量的半导体器件热连接包括半导体器件上的金属阻挡层和金属阻挡层上的高导热性材料，其将半导体器件连接到热能 吊具 金属阻挡层可以是一个或多个溅射层，并且高导热性材料可以是焊接到溅射材料上的金属材料，例如包括铟。 高导热性材料可以在远离半导体器件传导热量的同时形成初级热连接。 可以在散热器和散热器之间形成二次热连接。 二次热连接可以包括可压缩的固体碳纤维材料。 可以使用隔膜来容纳碳纤维材料，以防止碳纤维与半导体器件接触。