Laser diode package
    1.
    发明授权
    Laser diode package 有权
    激光二极管封装

    公开(公告)号:US06314117B1

    公开(公告)日:2001-11-06

    申请号:US09461183

    申请日:1999-12-14

    IPC分类号: H01S500

    摘要: The output optical beam from an angled-facet semiconductor laser diode is made to propagate parallel to the optical axis of the laser package with low optical back-reflection. In this way, the angled-facet devices are made compatible with conventional semiconductor laser packages enabling them to be economically incorporated in a wide-range of external semiconductor lasers and amplified spontaneous emission sources. The parallel beam is achieved by tilting the laser diode with respect to the front and back surfaces of the package.

    摘要翻译: 来自角度小平面半导体激光二极管的输出光束被制成平行于具有低光学背反射的激光器封装的光轴传播。 以这种方式,角度小平面装置与传统的半导体激光器封装兼容,使得它们能够经济地并入宽范围的外部半导体激光器和放大的自发发射源。 通过使激光二极管相对于封装的前表面和后表面倾斜来实现平行光束。

    Controlled solder interdiffusion for high power semiconductor laser
diode die bonding
    2.
    发明授权
    Controlled solder interdiffusion for high power semiconductor laser diode die bonding 失效
    大功率半导体激光二极管管芯焊接的控制焊料相互扩散

    公开(公告)号:US6027957A

    公开(公告)日:2000-02-22

    申请号:US673222

    申请日:1996-06-27

    IPC分类号: H01L23/482 H01L23/488

    摘要: A method and a resulting device for mounting a semiconductor to a submount by depositing a first layer of a first metal solder having a selected first melting point and corresponding thickness onto a surface of the semiconductor. Depositing a second layer of a second metal solder having a selected second melting point higher than the first melting point and a corresponding selected thickness onto a surface of the submount. Disposing the semiconductor surface and submount surface in confronting intimate contact and heating the submount and semiconductor to a temperature greater than the first temperature and lower that the second temperature for initiating and promoting liquid interdiffusion between the first and second solders.

    摘要翻译: 一种用于通过将具有选定的第一熔点和相应厚度的第一金属焊料的第一层沉积到半导体的表面上而将半导体安装到基座的方法和所得到的装置。 将具有高于第一熔点的选定的第二熔点和相应的所选厚度的第二金属焊料的第二层沉积到所述基座的表面上。 将半导体表面和底座表面布置成面对紧密接触并将基座和半导体加热到大于第一温度的温度,并降低第二温度以引发和促进第一和第二焊料之间的液体相互扩散。