公开(公告)号：US20060249762A1

公开(公告)日：2006-11-09

申请号：US10477913

申请日：2002-05-15

申请人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Reinhard Ronneberger ,  Markus Scholz ,  Tarek Lulé

发明人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Reinhard Ronneberger ,  Markus Scholz ,  Tarek Lulé

IPC分类号： H01L31/113

CPC分类号： H01L27/14636 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/02164 ,  H01L31/0224 ,  H01L31/03762

摘要： The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component consists of includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure consists of includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner. To this end, the layer of transparent conductive material can be connected to the potential connection arranged outside the pixel arrangement by means of an additional conductive structure formed on the substrate.

摘要翻译： 本发明涉及一种用于将电磁辐射转换为强度依赖光电流的光电子部件。 该组件包括一个特别根据CMOS技术形成的衬底。 衬底具有集成的半导体结构和位于光入射方向上游的光学活性薄层结构。 该结构包括一层透明导电材料和至少一层半导体材料，它们布置在隔离层上，在隔离层内设置连接装置，用于建立光学活性薄层结构与集成半导体之间的连接 结构布置在基板上。 本发明的目的是开发一种这样的光电子部件，使得可以以技术上简单的方式建立透明导电材料层与电势连接之间的电连接。 为此，透明导电材料层可以通过形成在基板上的附加导电结构连接到布置在像素布置外部的电位连接。

公开(公告)号：US07382034B2

公开(公告)日：2008-06-03

申请号：US10477913

申请日：2002-05-15

申请人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Reinhard Ronneberger ,  Markus Scholz ,  Tarek Lulé

发明人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Reinhard Ronneberger ,  Markus Scholz ,  Tarek Lulé

IPC分类号： H01L31/00

CPC分类号： H01L27/14636 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/02164 ,  H01L31/0224 ,  H01L31/03762

摘要： The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner. To this end, the layer of transparent conductive material can be connected to the potential connection arranged outside the pixel arrangement by means of an additional conductive structure formed on the substrate.

摘要翻译： 本发明涉及一种用于将电磁辐射转换为强度依赖光电流的光电子部件。 该组件包括特别根据CMOS技术形成的一个衬底。 衬底具有集成的半导体结构和位于光入射方向上游的光学活性薄层结构。 该结构包括布置在隔离层上的透明导电材料层和至少一层半导体材料层，其中设置连接装置，用于建立光学活性薄层结构与布置的集成半导体结构之间的连接 在基板上。 本发明的目的是开发一种这样的光电子部件，使得可以以技术上简单的方式建立透明导电材料层与电势连接之间的电连接。 为此，透明导电材料层可以通过形成在基板上的附加导电结构连接到布置在像素布置外部的电位连接。

公开(公告)号：US07259364B2

公开(公告)日：2007-08-21

申请号：US10497668

申请日：2002-12-04

申请人： Tarek Lulé

发明人： Tarek Lulé

IPC分类号： H01L31/00

CPC分类号： H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14692

摘要： The invention relates to a method for producing image sensors on the basis of TFA technology including of an amorphous thin-layer system that has been applied on a crystalline ASIC. The inventive method enables the production of image sensors on the basis of TFA technology, which improve the picture quality at low luminous intensity by reducing the dark currents. The photodiodes in the thin-layer material that are configured as pixels are linked with transistor structures in the crystalline ASIC via back electrodes. The transistor structures have particularly low leakage currents due to implantation technology or optimization of the production process.

摘要翻译： 本发明涉及一种基于TFA技术制造图像传感器的方法，其包括已经施加在结晶ASIC上的非晶薄层系统。 本发明的方法使得能够基于TFA技术生产图像传感器，其通过减少暗电流来改善低发光强度下的图像质量。 配置为像素的薄层材料中的光电二极管通过背电极与晶体ASIC中的晶体管结构相连。 由于注入技术或生产过程的优化，晶体管结构具有特别低的漏电流。