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公开(公告)号：US20090196110A1
公开(公告)日：2009-08-06
申请号：US12023592
申请日：2008-01-31
CPC分类号： G11C7/1048 , G11C7/12 , G11C16/24 , G11C19/00
摘要： An integrated circuit and a method for transferring data is provided. One embodiment provides a method for transferring data in an integrated circuit. The method includes driving a first line in accordance with data to be transferred. The data is transmitted from the first line to a second line based on a capacitive coupling.
摘要翻译： 提供了一种用于传送数据的集成电路和方法。 一个实施例提供了一种用于在集成电路中传送数据的方法。 该方法包括根据要传送的数据来驱动第一行。 基于电容耦合，数据从第一行传输到第二行。
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公开(公告)号：US07903480B2
公开(公告)日：2011-03-08
申请号：US12023592
申请日：2008-01-31
IPC分类号： G11C7/10
CPC分类号： G11C7/1048 , G11C7/12 , G11C16/24 , G11C19/00
摘要： An integrated circuit and a method for transferring data is provided. One embodiment provides a method for transferring data in an integrated circuit. The method includes driving a first line in accordance with data to be transferred. The data is transmitted from the first line to a second line based on a capacitive coupling.
摘要翻译： 提供了一种用于传送数据的集成电路和方法。 一个实施例提供了一种用于在集成电路中传送数据的方法。 该方法包括根据要传送的数据来驱动第一行。 基于电容耦合，数据从第一行传输到第二行。
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公开(公告)号：US07382034B2
公开(公告)日：2008-06-03
申请号：US10477913
申请日：2002-05-15
申请人： Peter Rieve , Marcus Walder , Konstantin Seibel , Jens Prima , Reinhard Ronneberger , Markus Scholz , Tarek Lulé
发明人： Peter Rieve , Marcus Walder , Konstantin Seibel , Jens Prima , Reinhard Ronneberger , Markus Scholz , Tarek Lulé
IPC分类号： H01L31/00
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14632 , H01L27/14643 , H01L31/02164 , H01L31/0224 , H01L31/03762
摘要： The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner. To this end, the layer of transparent conductive material can be connected to the potential connection arranged outside the pixel arrangement by means of an additional conductive structure formed on the substrate.
摘要翻译： 本发明涉及一种用于将电磁辐射转换为强度依赖光电流的光电子部件。 该组件包括特别根据CMOS技术形成的一个衬底。 衬底具有集成的半导体结构和位于光入射方向上游的光学活性薄层结构。 该结构包括布置在隔离层上的透明导电材料层和至少一层半导体材料层，其中设置连接装置，用于建立光学活性薄层结构与布置的集成半导体结构之间的连接 在基板上。 本发明的目的是开发一种这样的光电子部件，使得可以以技术上简单的方式建立透明导电材料层与电势连接之间的电连接。 为此，透明导电材料层可以通过形成在基板上的附加导电结构连接到布置在像素布置外部的电位连接。
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公开(公告)号：US20060249762A1
公开(公告)日：2006-11-09
申请号：US10477913
申请日：2002-05-15
申请人： Peter Rieve , Marcus Walder , Konstantin Seibel , Jens Prima , Reinhard Ronneberger , Markus Scholz , Tarek Lulé
发明人： Peter Rieve , Marcus Walder , Konstantin Seibel , Jens Prima , Reinhard Ronneberger , Markus Scholz , Tarek Lulé
IPC分类号： H01L31/113
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14632 , H01L27/14643 , H01L31/02164 , H01L31/0224 , H01L31/03762
摘要： The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component consists of includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure consists of includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner. To this end, the layer of transparent conductive material can be connected to the potential connection arranged outside the pixel arrangement by means of an additional conductive structure formed on the substrate.
摘要翻译： 本发明涉及一种用于将电磁辐射转换为强度依赖光电流的光电子部件。 该组件包括一个特别根据CMOS技术形成的衬底。 衬底具有集成的半导体结构和位于光入射方向上游的光学活性薄层结构。 该结构包括一层透明导电材料和至少一层半导体材料，它们布置在隔离层上，在隔离层内设置连接装置，用于建立光学活性薄层结构与集成半导体之间的连接 结构布置在基板上。 本发明的目的是开发一种这样的光电子部件，使得可以以技术上简单的方式建立透明导电材料层与电势连接之间的电连接。 为此，透明导电材料层可以通过形成在基板上的附加导电结构连接到布置在像素布置外部的电位连接。
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