公开(公告)号：US06318389B1

公开(公告)日：2001-11-20

申请号：US09430654

申请日：1999-10-29

申请人： Philip R. Schmidt ,  Jon Seilkop ,  Craig Spohr

发明人： Philip R. Schmidt ,  Jon Seilkop ,  Craig Spohr

IPC分类号： B08B1102

CPC分类号： H01L21/67313 ,  H01L21/67316 ,  H01L21/67326 ,  H01L21/6733 ,  Y10S134/902

摘要： A device for cleaning semiconductor wafers is provided. The device includes a carrier for holding wafers during the cleaning process. The carrier includes a frame with an open top and a plurality of carrier rods extending between opposite ends of the frame. The carrier rods have grooves that receive marginal edge portions of the wafers to retain them against movement in the carrier during cleaning and transportation. The grooves are structured to reduce the amount of contaminants remaining on the wafers after cleaning. The frame may be made substantially entirely of a polymeric material.

摘要翻译： 提供了一种用于清洁半导体晶片的装置。 该装置包括用于在清洁过程中保持晶片的载体。 载体包括具有开口顶部的框架和在框架的相对端部之间延伸的多个承载杆。 承载杆具有接收晶片的边缘部分的槽，以在清洁和运输期间保持它们抵抗载体中的运动。 这些凹槽被构造成减少在清洁之后残留在晶片上的污染物的量。 框架可以基本上完​​全由聚合物材料制成。

公开(公告)号：US06649883B2

公开(公告)日：2003-11-18

申请号：US09834118

申请日：2001-04-12

申请人： Yoshio Iwamoto ,  James C. Lenk ,  Philip Schmidt ,  Craig Spohr ,  Leslie G. Stanton

发明人： Yoshio Iwamoto ,  James C. Lenk ,  Philip Schmidt ,  Craig Spohr ,  Leslie G. Stanton

IPC分类号： H05B368

CPC分类号： H01L21/67253 ,  H01L21/67034

摘要： A method for calibrating a semiconductor wafer drying apparatus including a heater and a vessel containing a solvent and capable of receiving semiconductor wafers comprises selecting a test heater temperature and a test processing time. A first set of wafers is placed in the vessel and the heater is operated at the test heater temperature so that a solvent vapor cloud is created in the vessel. The first set of wafers is monitored for substantial envelopment by the vapor cloud during the test processing time. Based on the monitoring step, at least one of the test heater temperature and the test processing time is adjusted to establish at least one operating parameter of an operating heater temperature parameter and an operating processing time parameter for processing successive sets of wafers so as to promote substantial vapor cloud envelopment of each set of wafers dried in the drying apparatus.