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公开(公告)号：US10146070B2
公开(公告)日：2018-12-04
申请号：US15548687
申请日：2016-02-02
Inventor： Junichi Fujikata , Shigeki Takahashi , Mitsuru Takenaka , Younghyun Kim
Abstract: An optical phase modulator 100 according to an embodiment of this disclosure comprises a rib-type waveguide structure 110 comprising: a PN junction 106 comprising Si and formed in a lateral direction on a substrate; and a Si1-xGex layer 108 that is doped with a p-type impurity and comprises at least one layer laminated on the PN junction 106, so as to be electrically connected to the PN junction 106.
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公开(公告)号：US09678288B2
公开(公告)日：2017-06-13
申请号：US14904038
申请日：2014-07-09
Inventor： Shigeki Takahashi
CPC classification number: G02B6/4209 , G02B6/122 , G02B6/1228 , G02B6/2804 , G02B6/29344 , G02B2006/12121
Abstract: A low-cost optical circuit, in which influence of reflected light is reduced, is provided. According to an embodiment of the present invention, an optical circuit (200) comprises a first optical coupler (204A) having at least two outputs, and a second optical coupler (204B) coupled to at least one of the outputs of the first optical coupler (204A), and wherein the ratio of an intensity of light reflected from the first optical coupler (204A) to an intensity of light inputted to the first optical coupler is smaller than the ratio of an intensity of light reflected from the second optical coupler (204B) to an intensity of light inputted to the second optical coupler.
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公开(公告)号：US09897752B2
公开(公告)日：2018-02-20
申请号：US14780434
申请日：2014-03-20
Inventor： Shigeki Takahashi , Junichi Fujikata
CPC classification number: G02B6/1228 , G02B6/122 , G02B6/14 , G02B6/2813 , G02B6/305
Abstract: An optical end coupling type silicon optical integrated circuit is provided using an SOI substrate. This optical integrated circuit is constituted so as to connect with an external optical circuit at an end coupling part and have signal light incident to an optical circuit that includes a curved part. In the plane of the optical integrated circuit, the position of one end coupling part selected from among any thereof and the position of any multimode optical waveguide element to which a respective optical waveguide is connected via a respective curved part satisfy a positional relationship defined on the basis of a beam divergence angle [theta] of stray light.
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Patent Agency Ranking
公开(公告)号：US20160041338A1
公开(公告)日：2016-02-11
申请号：US14780434
申请日：2014-03-20
Inventor： Shigeki Takahashi , Junichi Fujikata
CPC classification number: G02B6/1228 , G02B6/122 , G02B6/14 , G02B6/2813 , G02B6/305
Abstract: An optical end coupling type silicon optical integrated circuit is provided using an SOI substrate. This optical integrated circuit is constituted so as to connect with an external optical circuit at an end coupling part and have signal light incident to an optical circuit that includes a curved part. In the plane of the optical integrated circuit, the position of one end coupling part selected from among any thereof and the position of any multimode optical waveguide element to which a respective optical waveguide is connected via a respective curved part satisfy a positional relationship defined on the basis of a beam divergence angle [theta] of stray light.
Abstract translation: 使用SOI衬底提供光端耦合型硅光集成电路。 该光集成电路构成为与端部耦合部分的外部光电路连接，并且具有入射到包括弯曲部分的光学电路的信号光。 在光集成电路的平面中，从其任意一个中选择的一端耦合部分的位置和通过相应的弯曲部分连接有相应光波导的任何多模光波导元件的位置满足定义在 杂散光的光束发散角θ的基础。
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公开(公告)号：US11054675B2
公开(公告)日：2021-07-06
申请号：US16645377
申请日：2018-08-24
Inventor： Junichi Fujikata , Shigeki Takahashi , Mitsuru Takenaka
Abstract: Provided is an optical modulator which is small in optical loss, is small in a size, and is low in required voltage and is operable to perform high-speed operation. The optical phase modulator 100 comprises a rib-type waveguide structure 110 including: a PN junction 106 which is formed of Si and is formed in a lateral direction on a substrate; and an Si1-xGex layer 108 which is constituted of at least one layer and is doped with an impurity to a p-type and is superposed on the PN junction 106 so as to be electrically connected to the PN junction 106. The rib-type waveguide structure 110 has a substantially uniform structure along a light propagation direction, and in a direction parallel with the substrate and perpendicular to the light propagation direction, a position of a junction interface 106a of the PN junction 106 is offset from a center of the Si1-xGex layer 108.
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公开(公告)号：US20200301177A1
公开(公告)日：2020-09-24
申请号：US16645377
申请日：2018-08-24
Inventor： Junichi Fujikata , Shigeki Takahashi , Mitsuru Takenaka
IPC: G02F1/025
Abstract: Provided is an optical modulator which is small in optical loss, is small in a size, and is low in required voltage and is operable to perform high-speed operation. The optical phase modulator 100 comprises a rib-type waveguide structure 110 including: a PN junction 106 which is formed of Si and is formed in a lateral direction on a substrate; and an Si1-xGex layer 108 which is constituted of at least one layer and is doped with an impurity to a p-type and is superposed on the PN junction 106 so as to be electrically connected to the PN junction 106. The rib-type waveguide structure 110 has a substantially uniform structure along a light propagation direction, and in a direction parallel with the substrate and perpendicular to the light propagation direction, a position of a junction interface 106a of the PN junction 106 is offset from a center of the Si1-xGex layer 108.
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公开(公告)号：US10996539B2
公开(公告)日：2021-05-04
申请号：US16440407
申请日：2019-06-13
Inventor： Shigeki Takahashi , Junichi Fujikata
Abstract: Provided is a SIS-type electro-optic modulator capable of realizing highly efficient optical coupling with a rib-type Si waveguide, improving modulation efficiency, realizing reduction of electric capacity and lead-out resistance in stacked semiconductor layers. The modulator includes a SIS junction constituted by first and second semiconductor layers having different type of conductivity and a dielectric layer interposed therebetween, wherein an electrical signal from electrodes coupled to the first and second semiconductor layers causes free carriers accumulate, deplete or invert on both sides of the dielectric layer, thereby modulating a free carrier concentration felt by an optical signal electric filed, light having a polarization component orthogonal to the width direction of the SIS junction is incident on the dielectric layer, and the width of the SIS junction is λ/neff or less (λ is the wavelength of the incident light and neff is an effective refractive index of the modulator to the incident light).
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公开(公告)号：US10274757B2
公开(公告)日：2019-04-30
申请号：US15559911
申请日：2016-02-17
Inventor： Junichi Fujikata , Shigeki Takahashi
Abstract: An electro-optic device includes a first semiconductor layer including the rib-type waveguide, which includes a rib part and a first slab part, which extends in a first direction from the rib part; a dielectric layer, which is formed on the rib part; a second semiconductor layer, which extends in a second direction, which is opposite to the first direction, from an upper surface of the dielectric layer; a first high-concentration impurity region, which is formed in the first semiconductor layer to be in contact with the first slab part on the first direction side; and a second high-concentration impurity region, which is formed in a region of the second semiconductor layer on the second direction side. The second high-concentration impurity region is formed in a region other than a region overlapping the first semiconductor layer in a lamination direction.
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