Micro light emitting diode chip and micro light emitting diode wafer

    公开(公告)号:US11462661B2

    公开(公告)日:2022-10-04

    申请号:US16730788

    申请日:2019-12-30

    摘要: A micro light emitting diode chip includes a light emitting layer, a first type semiconductor layer, and a second type semiconductor layer. The light emitting layer includes a metal element and a plurality of non-epitaxial media. The non-epitaxial media are separated from each other to disperse the metal element. A spacing between any two adjacent non-epitaxial media is less than 100 nanometers. The first type semiconductor layer is disposed on one side of the light emitting layer. The second type semiconductor layer is disposed on the other side of the light emitting layer.

    MICRO LIGHT EMITTING DIODE CHIP AND MICRO LIGHT EMITTING DIODE WAFER

    公开(公告)号:US20210119080A1

    公开(公告)日:2021-04-22

    申请号:US16730788

    申请日:2019-12-30

    摘要: A micro light emitting diode chip includes a light emitting layer, a first type semiconductor layer, and a second type semiconductor layer. The light emitting layer includes a metal element and a plurality of non-epitaxial media. The non-epitaxial media are separated from each other to disperse the metal element. A spacing between any two adjacent non-epitaxial media is less than 100 nanometers. The first type semiconductor layer is disposed on one side of the light emitting layer. The second type semiconductor layer is disposed on the other side of the light emitting layer.

    MICRO SEMICONDUCTOR STRUCTURE
    6.
    发明申请

    公开(公告)号:US20200176509A1

    公开(公告)日:2020-06-04

    申请号:US16436333

    申请日:2019-06-10

    IPC分类号: H01L27/15 H01L33/36

    摘要: A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length L1 of the upper portion in the first direction is greater than the length L2 of the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.

    Micro light-emitting device display apparatus

    公开(公告)号:US11640967B2

    公开(公告)日:2023-05-02

    申请号:US17128226

    申请日:2020-12-21

    摘要: A micro light-emitting device display apparatus includes a driving substrate and a plurality of micro light-emitting devices. The micro light-emitting devices are disposed on the driving substrate. The micro light-emitting devices include a plurality of first, second and third micro light-emitting devices. Each of the first, the second and the third micro light-emitting devices respectively has a plurality of first, second, and third light-emitting regions independently controlled. A first light-emitting region of a first micro light-emitting device, a second light-emitting region of a second micro light-emitting device, and a third light-emitting region of a third micro light-emitting device are located in a first pixel region. A first light-emitting region of another first micro light-emitting device, a second light-emitting region of another second micro light-emitting device, and another third light-emitting region of the third micro light-emitting device are located in a second pixel region.

    Electrode structure, micro light emitting device, and display panel

    公开(公告)号:US11164998B2

    公开(公告)日:2021-11-02

    申请号:US16689102

    申请日:2019-11-20

    摘要: An electrode structure includes a first electrode and a second electrode disposed opposite to each other. The first electrode has a first side and a second side. The second side is located between the first side and the second electrode. The first electrode has a maximum vertical length and a minimum vertical length from the first side to the second side, and a ratio of the minimum vertical length to the maximum vertical length is less than 0.8. The second electrode and the first electrode are separated by a first vertical gap and a second vertical gap, and the second vertical gap is greater than the first vertical gap.

    MICRO LIGHT-EMITTING DEVICE DISPLAY APPARATUS

    公开(公告)号:US20210327955A1

    公开(公告)日:2021-10-21

    申请号:US17128226

    申请日:2020-12-21

    摘要: A micro light-emitting device display apparatus includes a driving substrate and a plurality of micro light-emitting devices. The micro light-emitting devices are disposed on the driving substrate. The micro light-emitting devices include a plurality of first, second and third micro light-emitting devices. Each of the first, the second and the third micro light-emitting devices respectively has a plurality of first, second, and third light-emitting regions independently controlled. A first light-emitting region of a first micro light-emitting device, a second light-emitting region of a second micro light-emitting device, and a third light-emitting region of a third micro light-emitting device are located in a first pixel region. A first light-emitting region of another first micro light-emitting device, a second light-emitting region of another second micro light-emitting device, and another third light-emitting region of the third micro light-emitting device are located in a second pixel region.