公开(公告)号：US20050156269A1

公开(公告)日：2005-07-21

申请号：US11081908

申请日：2005-03-15

申请人： Pooi Lee ,  Kin Pey ,  Alex See ,  Lap Chan

发明人： Pooi Lee ,  Kin Pey ,  Alex See ,  Lap Chan

IPC分类号： H01L21/265 ,  H01L21/285 ,  H01L21/336 ,  H01L29/49 ,  H01L27/095

CPC分类号： H01L29/665 ,  H01L21/26506 ,  H01L21/28518 ,  H01L29/4933

摘要： A method and apparatus for performing nickel salicidation is disclosed. The nickel salicide process typically includes: forming a processed substrate including partially fabricated integrated circuit components and a silicon substrate; incorporating nitrogen into the processed substrate; depositing nickel onto the processed substrate; annealing the processed substrate so as to form nickel mono-silicide; removing the unreacted nickel; and performing a series procedures to complete integrated circuit fabrication. This nickel salicide process increases the annealing temperature range for which a continuous, thin nickel mono-silicide layer can be formed on silicon by salicidation. It also delays the onset of agglomeration of nickel mono-silicide thin-films to a higher annealing temperature. Moreover, this nickel salicide process delays the transformation from nickel mono-silicide to higher resistivity nickel di-silicide, to higher annealing temperature. It also reduces nickel enhanced poly-silicon grain growth to prevent layer inversion. Some embodiments of this nickel salicide process may be used in an otherwise standard salicide process, to form integrated circuit devices with low resistivity transistor gate electrodes and source/drain contacts.