公开(公告)号：US11798841B2

公开(公告)日：2023-10-24

申请号：US17160402

申请日：2021-01-28

申请人： Powerchip Semiconductor Manufacturing Corporation

发明人： Yen-Jhih Huang

IPC分类号： H01L21/768 ,  H01L21/3213 ,  H01L21/321

CPC分类号： H01L21/7684 ,  H01L21/3212 ,  H01L21/32134

摘要： A planarization method including the following steps is provided. A substrate is provided. The substrate includes a first region and a second region. A material layer is formed on the substrate. The top surface of the material layer in the first region is lower than the top surface of the material layer in the second region. A patterned photoresist layer is formed on the material layer in the first region. A first etching process is performed on the patterned photoresist layer, so that the top surface of the patterned photoresist layer and the top surface of the material layer in the second region have substantially the same height. A second etching process is performed on the patterned photoresist layer and the material layer. In the second etching process, the etching rate of the patterned photoresist layer is substantially the same as the etching rate of the material layer.

公开(公告)号：US20220216096A1

公开(公告)日：2022-07-07

申请号：US17160402

申请日：2021-01-28

申请人： Powerchip Semiconductor Manufacturing Corporation

发明人： Yen-Jhih Huang

IPC分类号： H01L21/768 ,  H01L21/321 ,  H01L21/3213

摘要： A planarization method including the following steps is provided. A substrate is provided. The substrate includes a first region and a second region. A material layer is formed on the substrate. The top surface of the material layer in the first region is lower than the top surface of the material layer in the second region. A patterned photoresist layer is formed on the material layer in the first region. A first etching process is performed on the patterned photoresist layer, so that the top surface of the patterned photoresist layer and the top surface of the material layer in the second region have substantially the same height. A second etching process is performed on the patterned photoresist layer and the material layer. In the second etching process, the etching rate of the patterned photoresist layer is substantially the same as the etching rate of the material layer.