公开(公告)号：US11676983B2

公开(公告)日：2023-06-13

申请号：US17134543

申请日：2020-12-28

申请人： Powertech Technology Inc.

发明人： Chung-Chang Chang ,  Chang-Lun Lu ,  Ming-Hung Lin

IPC分类号： H01L27/146

CPC分类号： H01L27/14632 ,  H01L27/14618 ,  H01L27/14687

摘要： A sensor includes a first chip, a dam structure and a cover. The first chip includes a substrate, a sensing area and a low-k material layer. The sensing area is located on the surface of the substrate. The low-k material layer is located in the substrate. The dam structure is located on the first chip. The dam structure covers the edge of the low-k material layer. The cover is located on the dam structure and covers the sensing area. A manufacturing method of a sensor is also provided.

公开(公告)号：US20210210539A1

公开(公告)日：2021-07-08

申请号：US17134543

申请日：2020-12-28

申请人： Powertech Technology Inc.

发明人： Chung-Chang Chang ,  Chang-Lun Lu ,  Ming-Hung Lin

IPC分类号： H01L27/146

摘要： A sensor includes a first chip, a dam structure and a cover. The first chip includes a substrate, a sensing area and a low-k material layer. The sensing area is located on the surface of the substrate. The low-k material layer is located in the substrate. The dam structure is located on the first chip. The dam structure covers the edge of the low-k material layer. The cover is located on the dam structure and covers the sensing area. A manufacturing method of a sensor is also provided.