公开(公告)号：US20020058410A1

公开(公告)日：2002-05-16

申请号：US09817934

申请日：2001-03-27

Applicant: ProMOS Technologies, Inc.

Inventor： Ben Sung ,  Heng-Kai Hsu

IPC: H01L021/336 ,  H01L021/4763 ,  H01L021/44

CPC classification number: H01L21/321 ,  H01L21/28061 ,  H01L29/4933 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of prohibiting from producing a protrusion alongside a silicide layer of a gate unit is disclosed. The method includes steps of (a) providing a chamber and a semiconductor wafer having the gate unit thereon, (b) loading the semiconductor wafer into the chamber, (c) providing a mixing gas of nitrogen gas and hydrogen gas into the chamber and performing a rapid thermal anneal (RTA) step for the gate unit, and (d) performing a rapid thermal oxidation (RTO) step for the gate unit. Alternatively, the method includes steps of (a) providing a first chamber and a semiconductor wafer having a gate unit thereon, (b) loading the semiconductor wafer into the first chamber and purging oxygen gas therein, (c) performing a rapid thermal anneal (RTA) step for the gate unit, and (d) performing a rapid thermal oxidation (RTO) step for the gate unit.

Abstract translation: 公开了一种禁止在栅极单元的硅化物层旁边产生突起的方法。 该方法包括以下步骤：（a）在其上提供具有栅极单元的腔室和半导体晶片，（b）将半导体晶片装载到腔室中，（c）将氮气和氢气的混合气体提供到腔室中并执行 用于栅极单元的快速热退火（RTA）步骤，以及（d）对栅极单元执行快速热氧化（RTO）步骤。 或者，该方法包括以下步骤：（a）提供在其上具有栅极单元的第一室和半导体晶片，（b）将半导体晶片装载到第一室中并在其中吹扫氧气;（c）执行快速热退火 RTA）步骤，以及（d）对门单元执行快速热氧化（RTO）步骤。