公开(公告)号：US09865771B2

公开(公告)日：2018-01-09

申请号：US15110991

申请日：2015-01-07

Applicant: QD LASER, INC. ,  UNIVERSITY OF SHEFFIELD

Inventor： Kenichi Nishi ,  Takeo Kageyama ,  Keizo Takemasa ,  Mitsuru Sugawara ,  Richard Hogg ,  Siming Chen

IPC: H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32

Abstract: A semiconductor light-emitting element includes: a lower clad layer 12 that is provided on a substrate 10; an active layer 20 that is provided on the lower clad layer 12 and includes a quantum well layer 24 and a plurality of quantum dots 28 sandwiching a second barrier layer 22b together with the quantum well layer 24; and an upper clad layer 14 that is provided on the active layer 20, wherein a distance D between the quantum well layer 24 and the plurality of quantum dots 28 is smaller than an average of distances X between centers of the plurality of quantum dots 28.