公开(公告)号：US20140313821A1

公开(公告)日：2014-10-23

申请号：US14320897

申请日：2014-07-01

Applicant: QUALCOMM Incorporated

Inventor： Stanley Seungchul SONG ,  Mohamed Hassan ABU-RAHMA ,  Beom-Mo HAN

IPC: H01L29/78 ,  G11C11/40 ,  H01L29/66

CPC classification number: H01L29/785 ,  G11C11/40 ,  H01L27/108 ,  H01L27/10802 ,  H01L27/10826 ,  H01L27/10879 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/7841 ,  H01L29/7855 ,  H01L29/78648

Abstract: A fin-type device system and method is disclosed. In a particular embodiment, a transistor is disclosed and includes forming a gate of a transistor within a substrate having a surface and a buried oxide (BOX) layer within the substrate and adjacent to the gate at a first BOX layer face. The method also includes a raised source-drain channel (“fin”), where at least a portion of the fin extends from the surface of the substrate, and where the fin has a first fin face adjacent to a second BOX layer face of the BOX layer.

Abstract translation: 公开了一种翅片式装置系统和方法。 在特定实施例中，公开了晶体管，并且包括在衬底内形成晶体管的栅极，所述衬底具有衬底内的表面和掩埋氧化物（BOX）层，并且在第一BOX层面处与栅极相邻。 该方法还包括升高的源 - 漏通道（“鳍”），其中鳍的至少一部分从衬底的表面延伸，并且其中鳍具有与第二BOX层的第二BOX层面相邻的第一鳍面 BOX层。