公开(公告)号：US09698267B2

公开(公告)日：2017-07-04

申请号：US14320897

申请日：2014-07-01

Applicant: QUALCOMM Incorporated

Inventor： Stanley Seungchul Song ,  Mohamed Hassan Abu-Rahma ,  Beom-Mo Han

IPC: H01L29/786 ,  H01L29/78 ,  H01L27/108 ,  H01L29/66 ,  G11C11/40

CPC classification number: H01L29/785 ,  G11C11/40 ,  H01L27/108 ,  H01L27/10802 ,  H01L27/10826 ,  H01L27/10879 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/7841 ,  H01L29/7855 ,  H01L29/78648

Abstract: A transistor is disclosed and includes forming a gate of a transistor within a substrate having a surface and a buried oxide (BOX) layer within the substrate and adjacent to the gate at a first BOX layer face. The method also includes a raised source-drain channel (“fin”), where at least a portion of the fin extends from the surface of the substrate, and where the fin has a first fin face adjacent to a second BOX layer face of the BOX layer.