公开(公告)号：US10707866B1

公开(公告)日：2020-07-07

申请号：US16230884

申请日：2018-12-21

Applicant: QUALCOMM Incorporated

Inventor： Qingqing Liang ,  Ravi Pramod Kumar Vedula ,  George Peter Imthurn ,  Christopher Nelles Brindle ,  Sinan Goktepeli

IPC: H03K17/687 ,  H03K17/10 ,  H03K17/284 ,  H01L27/12 ,  H01L23/50 ,  H01L21/76 ,  H01L21/84 ,  H01L23/66 ,  H01L21/762

Abstract: A dual sided contact switch has a first independent drain/source region of a multi-gate active device. The dual sided contact switch also has a first shared drain/source region of the multi-gate active device. The dual sided contact switch has a second independent drain/source region of the multi-gate active device, adjacent to the first shared drain/source region. The dual sided contact switch also has a second shared drain/source region of the multi-gate active device, adjacent to the first independent drain/source region. The dual sided contact switch has a gate region between the first independent drain/source region and the first shared drain/source region, and also between the second independent drain/source region and the second shared drain/source region.