公开(公告)号：US20190172635A1

公开(公告)日：2019-06-06

申请号：US16210976

申请日：2018-12-05

Applicant: Qualcomm Incorporated

Inventor： Bon-Hyun Ku ,  Hyunchul Park

IPC: H01F27/38 ,  H01F30/12 ,  H01Q3/36

Abstract: Methods and apparatuses can implement a phase shifter including at least one phase shift unit. In an example aspect, the phase shift unit has an inductive-capacitive (LC) core that includes an inductor to provide an inductance and a transistor to provide a capacitance using a parasitic capacitance thereof. In some implementations, the LC core includes a first connector node, a second connector node, a transistor, a first inductor, and a second inductor. The transistor is coupled between the first and second connector nodes and is configured to provide a capacitance to the LC core. The first inductor is coupled to the first connector node and is configured to provide a first inductance. The second inductor is coupled to the second connector node and is configured to provide a second inductance. Using a pi-type circuit topology for the LC core can reduce an insertion loss of the phase shift unit.

公开(公告)号：US10965261B2

公开(公告)日：2021-03-30

申请号：US16208398

申请日：2018-12-03

Applicant: Qualcomm Incorporated

Inventor： Jeremy Dunworth ,  Hyunchul Park ,  Bon-Hyun Ku ,  Vladimir Aparin

IPC: H03F3/21 ,  H03F3/195 ,  H03F3/213 ,  H03F1/56 ,  H03F3/45 ,  H03F1/02 ,  H03F3/30 ,  H03F3/345 ,  H03F3/193 ,  H03F3/24

Abstract: The present disclosure provides an amplifier circuit that includes one or more amplifier stages, each of the one or more amplifier stages including a complementary transistor configuration. The complementary transistor configuration includes an NMOS transistor and a PMOS transistor. The NMOS transistor is electrically coupled in parallel to the PMOS transistor. The amplifier circuit further includes an output amplifier stage electrically coupled to an output of the one or more amplifier stages, the output amplifier stage including a non-complementary transistor configuration including one or more NMOS transistors or PMOS transistors.

公开(公告)号：US09923524B2

公开(公告)日：2018-03-20

申请号：US15214857

申请日：2016-07-20

Applicant: QUALCOMM Incorporated

Inventor： Nicholas Michael Carbone ,  Jeremy Darren Dunworth ,  Hyunchul Park

IPC: H03F1/32 ,  H04B17/00 ,  H03F3/21 ,  H04W52/52

CPC classification number: H03F1/3241 ,  H03F1/0261 ,  H03F1/3247 ,  H03F1/3282 ,  H03F3/211 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/18 ,  H03F2200/451 ,  H03F2201/3212 ,  H03F2203/21106 ,  H03F2203/21131 ,  H03F2203/21181 ,  H03F2203/21193 ,  H04B1/0475 ,  H04B1/0483 ,  H04B2001/0416 ,  H04B2001/0425 ,  H04B2001/045 ,  H04W52/52

Abstract: Certain aspects of the present disclosure relate to methods and apparatus for power amplifier control. A power amplifier network includes a first path comprising a first power amplifier. The power amplifier network further includes a second path comprising a second power amplifier. The power amplifier network further includes a common input path to both the first path and the second path. The power amplifier network further includes a first power control network for controlling a first signal applied to the first power amplifier. The power amplifier network further includes a second power control network for controlling a second signal applied to the second power amplifier, wherein the first power control network is different from the second power control network.