公开(公告)号：US20180019734A1

公开(公告)日：2018-01-18

申请号：US15207800

申请日：2016-07-12

Applicant: QUALCOMM Incorporated

Inventor： Rakesh VATTIKONDA ,  Samrat SINHAROY ,  De LU

IPC: H03K3/037 ,  G01R31/317

CPC classification number: H03K3/0372 ,  G01R31/31704 ,  G01R31/31723 ,  G01R31/318541

Abstract: In an aspect of the disclosure, a method and an apparatus are provided. The apparatus is a register array including first and second flip-flop latch arrays. The first flip-flop latch array includes a first set of master latches, a first set of slave latches coupled to the first set of master latches, and a first address port. The second flip-flop latch array includes a second set of master latches, a second set of slave latches coupled to the second set of master latches, and a second address port. The register array includes an address counter, coupled to the first flip-flop latch array and the second flip-flop latch array. The address counter is shared by the first flip-flop latch array and the second flip-flop latch array and configured to address, in parallel in a test mode, the first flip-flop latch array through the first address port and the second flip-flop latch array through the second address port.

公开(公告)号：US20210391249A1

公开(公告)日：2021-12-16

申请号：US17081720

申请日：2020-10-27

Applicant: QUALCOMM Incorporated

Inventor： Ramaprasath VILANGUDIPITCHAI ,  Gudoor REDDY ,  Samrat SINHAROY ,  Smeeta HEGGOND ,  Anil Kumar KODURU ,  Kamesh MEDISETTI ,  Seung Hyuk KANG

IPC: H01L23/522 ,  H01L27/02

Abstract: A cell on an IC includes a first set of Mx layer interconnects coupled to a first voltage, a second set of Mx layer interconnects coupled to a second voltage different than the first voltage, and a MIM capacitor structure below the Mx layer. The MIM capacitor structure includes a CTM, a CBM, and an insulator between portions of the CTM and the CBM. The first set of Mx layer interconnects is coupled to the CTM. The second set of Mx layer interconnects is coupled to the CBM. The MIM capacitor structure is between the Mx layer and an Mx-1 layer. The MIM capacitor structure includes a plurality of openings. The MIM capacitor structure is continuous within the cell and extends to at least two edges of the cell. In one configuration, the MIM capacitor structure extends to each edge of the cell.