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公开(公告)号:US10454509B2
公开(公告)日:2019-10-22
申请号:US15962865
申请日:2018-04-25
Applicant: QUALCOMM Incorporated
Inventor: Bhushan Shanti Asuri , Krishnaswamy Thiagarajan , Ashok Swaminathan , Shahin Mehdizad Taleie , Yen-Wei Chang , Vinod Panikkath , Sameer Vasantlal Vora , Ayush Mittal , Tonmoy Biswas , Sy-Chyuan Hwu , Zhilong Tang , Ibrahim Chamas , Ping Wing Lai , Behnam Sedighi , Dongwon Seo , Nitz Saputra
Abstract: A communication circuit may include a first pair of digital-to-analog converters (DACs) coupled to an input of a first mixer and configured to generate first baseband signals. The communication circuit may further include a second pair of DACs coupled to an input of a second mixer and configured to generate second baseband signals. The second baseband signals may be shifted in phase relative to the first baseband signals.
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公开(公告)号:US20180062636A1
公开(公告)日:2018-03-01
申请号:US15634800
申请日:2017-06-27
Applicant: Qualcomm Incorporated
Inventor: Hayg-Taniel Dabag , Bhushan Shanti Asuri , Hongyan Yan , Sy-Chyuan Hwu , Youngchang Yoon
IPC: H03K17/16
CPC classification number: H03K17/161 , H03K17/063 , H03K17/693 , H03K2217/0054 , H04B1/44
Abstract: Various aspects of this disclosure describe configuring and operating a transistor switch. Examples include a self-biasing circuit that contains a diode-connected transistor whose source or drain is connected to the gate of a transistor configured as a switch. The diode-connected transistor is enabled and disabled responsive to voltage swings in the input signal to the transistor configured as a switch. When enabled, the diode-connected transistor may charge the floating gate voltage of the transistor configured as a switch. When disabled, the diode-connected transistor may acts as a high impedance to inhibit voltage discharge from the gate of the transistor configured as a switch.
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