公开(公告)号：US20240371924A1

公开(公告)日：2024-11-07

申请号：US18313060

申请日：2023-05-05

Applicant: QUALCOMM Incorporated

Inventor： Peijie Feng ,  Yan Sun ,  Shreesh Narasimha

IPC: H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: Enhanced-shaped extension region for gate-all-around (GAA) field-effect transistor (FET) devices and related fabrication methods are disclosed. The GAA FET device includes an extension region of semiconductor material coupled from the respective channel to the source/drain region to facilitate forming a conductive channel between the source and the drain regions when the GAA FET device is activated. The area of the extension region between the source/drain regions and the channel forms a series resistance between source/drain regions and the channel. To reduce channel parasitic resistance, the extension region of the GAA FET device has an enhanced extension portion that has an extended height orthogonal to the channel direction. The extension region with its enhanced extension portion has reduced resistance as compared to an extension region not containing the enhanced extension portion, thus reducing channel parasitic resistance of the GAA FET device for improved performance.

公开(公告)号：US20240429300A1

公开(公告)日：2024-12-26

申请号：US18339349

申请日：2023-06-22

Applicant: QUALCOMM Incorporated

Inventor： Shreesh Narasimha ,  Yan Sun ,  Peijie Feng

IPC: H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A gate-all-around (GAA) field effect transistor (FET) device, and related fabrication methods are disclosed. The GAA FET device includes P-type semiconductor PFET(s) and N-type semiconductor NFET(s) having channels with different crystalline orientation through a substrate. The GAA PFET(s) includes a channel structure of a first type of crystalline orientation (e.g., or ) and the GAA NFET(s) include a channel structure of a second type of crystalline orientation (e.g., ) different from the first type of crystalline orientation of the GAA PFET(s). The different crystalline orientation channels improve the balance of carrier mobility for both carrier types (i.e., P-type and N-type) of GAA FETs in the GAA FET device. In one aspect, the different crystalline orientation channels are provided through a substrate to increase and/or balance carrier mobility between GAA PFET(s) and NFET(s) to achieve a more balanced drive strength between these types of transistors.