公开(公告)号：US20150048514A1

公开(公告)日：2015-02-19

申请号：US13967243

申请日：2013-08-14

Applicant: QUALCOMM MEMS Technologies, Inc.

Inventor： Hairong Tang ,  Yaoling Pan ,  Tsengyou Syau

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/481 ,  B81B2207/07 ,  B81C1/00095 ,  H01L21/768 ,  H01L21/76801 ,  H01L21/76838 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This disclosure provides systems, methods and apparatus for a stacked via having a top via structure and a bottom via structure. In one aspect, the bottom via structure includes a bottom dielectric layer and a bottom via extending through the bottom dielectric layer. The bottom via includes a bottom metal formed on the bottom dielectric layer, where the bottom via is substantially filled by a dielectric material. The top via structure includes a top dielectric layer over the bottom metal and a top via extending to a top plane of the bottom via in the top dielectric layer. The top via includes a top metal formed on the top dielectric layer, where the top metal is in electrical contact with the bottom metal at a peripheral area of the bottom via structure.

Abstract translation: 本公开提供了具有顶部通孔结构和底部通孔结构的堆叠通孔的系统，方法和装置。 一方面，底部通孔结构包括底部电介质层和延伸通过底部电介质层的底部通孔。 底部通孔包括形成在底部电介质层上的底部金属，其中底部通孔基本上由介电材料填充。 顶部通孔结构包括在底部金属上的顶部电介质层和顶部通孔，其在顶部电介质层中延伸到底部通孔的顶部平面。 顶部通孔包括形成在顶部电介质层上的顶部金属，其中顶部金属在底部通孔结构的外围区域与底部金属电接触。