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公开(公告)号:US20210090907A1
公开(公告)日:2021-03-25
申请号:US17095727
申请日:2020-11-11
Abstract: A method for bonding electrodes of a flip-chip die to corresponding electrical contacts of an encapsulation substrate and a flip chip. The method comprises steps of: S11: applying a first metal layer on the electrode surface of the flip-chip die and the structured surface of the encapsulation substrate as a base layer; S12: transferring, by means of photolithography, a structural pattern of a mask onto the base layer; S13: electroforming metal, according to the transferred structural pattern, to form electrical connections between electrodes of the flip-chip die and the corresponding electrical contacts of an encapsulation substrate; and S14: cutting off undesired electrical connections between different electrodes and between different electrical contacts by removing unnecessary metal areas.
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公开(公告)号:US20180261743A1
公开(公告)日:2018-09-13
申请号:US15757902
申请日:2016-04-26
Applicant: Quan Ke
IPC: H01L33/62 , H01L21/56 , H01L33/52 , H01L33/00 , H01L21/283
CPC classification number: H01L33/62 , H01L21/283 , H01L21/568 , H01L33/005 , H01L33/52 , H01L2224/04105 , H01L2224/19 , H01L2224/96 , H01L2924/18162 , H01L2933/0066
Abstract: An encapsulation method for a flip chip that includes electroforming metal on an electrode surface of a flip chip and a surface of an encapsulation substrate simultaneously. The encapsulation method specifically includes setting an encapsulation substrate around a flip chip; plating a metal conducting film on an electrode surface of the flip chip and a surface of the encapsulation substrate; coating a photoresist on a surface of the metal conducting film; aligning and photoetching an electrode structure on a photoetching plate and an electrode structure of the flip chip, and covering an insulating part between electrodes with the photoresist; taking the metal conducting film as the electrode, electroforming metal inside the photoresist structural model; and removing the photoresist covering the insulating part and removing the metal conducting film. The encapsulation method adopts electroforming and photoetching technology, and thus the process is simplified and the production efficiency is improved.
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公开(公告)号:US10985300B2
公开(公告)日:2021-04-20
申请号:US15757902
申请日:2016-04-26
Applicant: Quan Ke
IPC: H01L33/62 , H01L21/56 , H01L21/283 , H01L33/00 , H01L33/52
Abstract: An encapsulation method for a flip chip that includes electroforming metal on an electrode surface of a flip chip and a surface of an encapsulation substrate simultaneously. The encapsulation method specifically includes setting an encapsulation substrate around a flip chip; plating a metal conducting film on an electrode surface of the flip chip and a surface of the encapsulation substrate; coating a photoresist on a surface of the metal conducting film; aligning and photoetching an electrode structure on a photoetching plate and an electrode structure of the flip chip, and covering an insulating part between electrodes with the photoresist; taking the metal conducting film as the electrode, electroforming metal inside the photoresist structural model; and removing the photoresist covering the insulating part and removing the metal conducting film. The encapsulation method adopts electroforming and photoetching technology, and thus the process is simplified and the production efficiency is improved.
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