Patent search ap:("RAYTHEON CO") AND inv:"CHENEY PHILIP W" Page 1

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发明授权
Circuits utilizing the threshold properties of recombination radiation semiconductor devices 失效
Title translation: 利用重组辐射半导体器件的阈值特性的电路

公开(公告)号：US3499158A

公开(公告)日：1970-03-03

申请号：US3499158D

申请日：1964-04-24

Applicant: RAYTHEON CO

Inventor： LAVINE JEROME M , CHENEY PHILIP W

IPC: G02F3/00 , H01L33/00 , H03K17/78 , H03K19/14 , H01J39/12

CPC classification number: H03K19/14 , G02F3/00 , H01L33/00 , H03K17/78

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